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TLV2772QDRQ1

Texas Instruments

TLV2772QDRQ1 by Texas Instruments

TLV2772QDRQ1 by Texas Instruments is a CMOS Operational Amplifier with 2 functions, featuring low bias current of 0.00006 uA @25C and high common mode rejection ratio of 82 dB. Ideal for automotive applications due to AEC-Q100 screening level, it operates at temperatures ranging from -40 to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,076 parts In-Stock

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Digiode

USA . 1,111 parts In-Stock

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Parana Technologies

USA . 737 parts In-Stock

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$2.267

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$2.767

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737

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$2.767

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One Stop Electronics

USA . 1,316 parts In-Stock

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$2.410

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DigiPath Technology Company

USA . 2,079 parts In-Stock

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$2.496

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$2.296

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ChromeModa Solutions

Germany . 1,986 parts In-Stock

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$2.547

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$2.089

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IDEA Electronic Components Group

UK . 1,326 parts In-Stock

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$2.547

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$2.292

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AZTECH Wire

Italy . 225 parts In-Stock

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$14.794

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Microchip USA

USA . 5,194 parts In-Stock

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Corphita

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Overview

Discover the TLV2772QDRQ1 by Texas Instruments, a top-tier operational amplifier designed for automotive applications. Crafted with precision and reliability in mind, this dual-function Op Amp boasts a wide range of benefits, including low bias current, high common-mode rejection ratio, and fast slew rates. With its compact package style and cutting-edge CMOS technology, the TLV2772QDRQ1 offers superior performance and efficiency for your automotive design needs. Trust Texas Instruments to deliver quality products that elevate your projects to new heights. Elevate your automotive designs with the TLV2772QDRQ1 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the product durable and resistant to environmental factors, ensuring a long lifespan.

Maximum Input Offset Voltage: 2700 uV

The low maximum input offset voltage ensures accurate and precise signal processing, making it suitable for high-precision applications.

Maximum Average Bias Current (IIB): 0.00035 uA

The low maximum average bias current ensures minimal power consumption and helps in maintaining signal integrity.

Surface Mount: YES

The surface mount capability allows for easier and efficient PCB assembly, saving time and resources during production.

No. of Functions: 2

Having multiple functions in a single device increases functionality and reduces the need for additional components, saving space and cost.

Nominal Common Mode Reject Ratio: 82 dB

The high nominal common mode reject ratio ensures effective rejection of common-mode signals, leading to cleaner and more accurate output signals.

Nominal Supply Voltage / Vsup (V): 2.7

The nominal supply voltage of 2.7V is suitable for low-power applications and extends battery life in portable devices.

Minimum Slew Rate: 4.7 V/us

The minimum slew rate of 4.7V/us indicates fast response time to input signals, making it ideal for applications requiring rapid signal processing.

Maximum Supply Voltage Limit: 7 V

The maximum supply voltage limit of 7V ensures protection against overvoltage conditions, enhancing the product's reliability and safety.

Frequency Compensation: YES

Having frequency compensation helps in stabilizing the amplifier's response at different frequencies, ensuring consistent performance across a wide range of operating conditions.

Minimum Voltage Gain: 13000

The high minimum voltage gain of 13000 ensures strong amplification capabilities, making it suitable for applications requiring high gain levels.

Maximum Seated Height: 1.75 mm

The low maximum seated height allows for compact and space-efficient PCB designs, making it versatile for various form factor requirements.

Nominal Unity Gain Bandwidth: 4800 kHz

The nominal unity gain bandwidth of 4800 kHz indicates high-frequency response, making it suitable for applications requiring fast signal processing.

Technology: CMOS

The CMOS technology used in the product ensures low power consumption, high noise immunity, and compatibility with a wide range of digital and analog systems.

Maximum Supply Current: 4 mA

The low maximum supply current of 4mA helps in reducing power consumption and heat dissipation, making it energy-efficient and suitable for battery-powered devices.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2772QDRQ1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

2.7/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

4.8 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

82 dB

Input Offset Voltage Limit:

2700 uV

Minimum Voltage Gain:

13000

Minimum Slew Rate:

4.7 V/us

Nominal Slew Rate:

6 V/us

Peak Bias Current:

350 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

7 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

4 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLV2772QDRQ1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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