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TLV2772AQPWRG4

Texas Instruments

TLV2772AQPWRG4 by Texas Instruments

TLV2772AQPWRG4 by Texas Instruments is a CMOS Operational Amplifier with 1900uV Max Input Offset Voltage, 82dB Nominal CMRR, and 4.7V/us Min Slew Rate. Ideal for automotive applications due to its low-bias design and VOLTAGE-FEEDBACK architecture.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,087 parts In-Stock

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Digiode

USA . 1,253 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 1,752 parts In-Stock

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$4.143

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$4.591

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IDEA Electronic Components Group

UK . 1,316 parts In-Stock

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$4.655

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$4.190

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ChromeModa Solutions

Germany . 22 parts In-Stock

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$4.655

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$3.817

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One Stop Electronics

USA . 557 parts In-Stock

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$5.410

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AZTECH Wire

Italy . 687 parts In-Stock

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$15.331

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QUARKTWIN TECHNOLOGY LTD

USA . 22,627 parts In-Stock

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Microchip USA

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DigiPath Technology Company

USA . 715 parts In-Stock

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Corphita

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Overview

Enhance your electronics projects with the TLV2772AQPWRG4 operational amplifiers by Texas Instruments - a reliable and high-quality choice for various applications. With Texas Instruments' reputation for top-notch manufacturing, trust that this product delivers superior performance and precision. Whether you're working on automotive systems, consumer electronics, or industrial equipment, this operational amplifier offers low bias, fast slew rate, and wide bandwidth to meet your design needs. Elevate your designs with the TLV2772AQPWRG4 and experience unparalleled value and efficiency in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for various applications.

Maximum Input Offset Voltage: 1900 uV

Low input offset voltage helps maintain accurate signal processing.

Maximum Average Bias Current (IIB): 0.00035 uA

Low bias current ensures minimal power consumption and improved signal integrity.

Surface Mount: YES

Convenient surface mount design for easy installation and PCB layout.

Nominal Common Mode Reject Ratio: 82 dB

High common mode rejection ratio ensures effective rejection of noise and interference.

Nominal Unity Gain Bandwidth: 4800 kHz

High unity gain bandwidth for fast and efficient signal processing.

Power Supplies (V): 2.7/5

Versatile power supply options for compatibility with various systems.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifiers are widely used in circuit designs for their versatility and performance.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2772AQPWRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

2.7/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

4.8 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

82 dB

Input Offset Voltage Limit:

1900 uV

Minimum Voltage Gain:

13000

Minimum Slew Rate:

4.7 V/us

Nominal Slew Rate:

6 V/us

Peak Bias Current:

350 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

7 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

4 mA

Physical Characteristics

Length:

0.173 in (4.4 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.25

Trade Compliance

TLV2772AQPWRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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