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TLV2772AQDRG4

Texas Instruments

TLV2772AQDRG4 by Texas Instruments

TLV2772AQDRG4 by Texas Instruments is a CMOS Operational Amplifier with 1900uV Max Input Offset Voltage, 82dB Nominal CMRR, and 4800kHz Unity Gain Bandwidth. Ideal for automotive applications due to its low-bias current, VOLTAGE-FEEDBACK architecture, and compact SMALL OUTLINE package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,505 parts In-Stock

1+ parts

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8,505

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Digiode

USA . 1,880 parts In-Stock

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1,880

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 605 parts In-Stock

1+ parts

$0.410

100+ parts

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605

$0.410

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Parana Technologies

USA . 1,422 parts In-Stock

1+ parts

$2.273

100+ parts

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1k+ parts

$2.774

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1,422

$2.273

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$2.774

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DigiPath Technology Company

USA . 885 parts In-Stock

1+ parts

$2.503

100+ parts

$2.303

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885

$2.503

$2.303

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ChromeModa Solutions

Germany . 1,215 parts In-Stock

1+ parts

$2.554

100+ parts

$2.094

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1,215

$2.554

$2.094

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IDEA Electronic Components Group

UK . 552 parts In-Stock

1+ parts

$2.554

100+ parts

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$2.299

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552

$2.554

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$2.299

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AZTECH Wire

Italy . 769 parts In-Stock

1+ parts

$11.003

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769

$11.003

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Microchip USA

USA . 10,859 parts In-Stock

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Corphita

USA . 365 parts In-Stock

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365

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Overview

Experience superior performance and reliability with the TLV2772AQDRG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers cutting-edge operational amplifiers that guarantee precision and efficiency. Ideal for a wide range of applications, this op amp offers customers unparalleled value, benefits, and advantages. Trust in the TLV2772AQDRG4 to provide seamless operation and unmatched quality, making it the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and insulation for the operational amplifier, ensuring reliable performance in various environments.

Maximum Input Offset Voltage: 1900 uV

Low input offset voltage helps in minimizing errors in the output signal, making this operational amplifier suitable for precision applications.

Maximum Average Bias Current (IIB): 0.00035 uA

Low bias current ensures minimal power consumption and reduced signal distortion, making this op amp energy-efficient and accurate.

Surface Mount: YES

Surface mount design allows for easy installation on PCBs, saving space and simplifying the assembly process.

Nominal Unity Gain Bandwidth: 4800 kHz

High unity gain bandwidth ensures stable and accurate operation at different frequency ranges, making this operational amplifier versatile and suitable for various applications.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows this op amp to function reliably in high-temperature environments, making it suitable for industrial and automotive applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2772AQDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

2.7/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

4.8 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

82 dB

Input Offset Voltage Limit:

1900 uV

Minimum Voltage Gain:

13000

Minimum Slew Rate:

4.7 V/us

Nominal Slew Rate:

6 V/us

Peak Bias Current:

350 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

7 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

4 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLV2772AQDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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