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TLV2772AMDR

Texas Instruments

TLV2772AMDR by Texas Instruments

TLV2772AMDR by Texas Instruments is a CMOS Operational Amplifier with 2 functions, offering low bias and high gain. It has a max supply voltage of 7V, operates in military temperature grade range (-55 to 125 °C), and features a nominal unity gain bandwidth of 4800 kHz. Ideal for applications requiring precise signal amplification in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,986 parts In-Stock

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Digiode

USA . 1,331 parts In-Stock

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Parana Technologies

USA . 1,506 parts In-Stock

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$5.208

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$5.820

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$5.208

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One Stop Electronics

USA . 1,564 parts In-Stock

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$5.410

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DigiPath Technology Company

USA . 2,369 parts In-Stock

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$5.735

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$5.276

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$5.735

$5.276

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ChromeModa Solutions

Germany . 4,824 parts In-Stock

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$5.852

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$4.799

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$5.852

$4.799

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IDEA Electronic Components Group

UK . 2,219 parts In-Stock

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$5.852

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$5.267

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AZTECH Wire

Italy . 519 parts In-Stock

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$9.516

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519

$9.516

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A-Z Elektronik GmbH

Germany . 6,008 parts In-Stock

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Corphita

USA . 2,557 parts In-Stock

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Microchip USA

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Overview

Elevate your projects with the TLV2772AMDR by Texas Instruments, a top-tier operational amplifier that delivers superior performance and reliability. Manufactured by industry leader Texas Instruments, this op amp is designed for precision and efficiency in a variety of applications. From high-quality audio systems to sophisticated sensor interfaces, the TLV2772AMDR offers unmatched value and versatility. Trust Texas Instruments to provide cutting-edge technology that meets your needs and exceeds your expectations. Choose excellence with the TLV2772AMDR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components, making the product suitable for a wide range of applications.

Maximum Input Offset Voltage: 1900 uV

Allows for accurate signal processing with minimal error, ensuring high precision in calculations.

Maximum Average Bias Current (IIB): 0.00035 uA

Low bias current reduces power consumption and improves efficiency of the operational amplifier.

Surface Mount: YES

Facilitates easy and secure installation on PCBs, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 2.7

Operates within a low voltage range, ideal for low power applications and battery-operated devices.

Minimum Slew Rate: 4.7 V/us

Provides fast response time for changing input signals, allowing for rapid adjustments in output.

Nominal Unity Gain Bandwidth: 4800 kHz

Offers a high bandwidth for signal amplification, ensuring faithful reproduction of input signals without distortion.

Technology: CMOS

Utilizes CMOS technology for low power consumption, making it suitable for portable and energy-efficient applications.

Maximum Supply Current: 4 mA

Consumes minimal power during operation, extending the battery life of devices and reducing energy costs.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2772AMDR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

2.7/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

4.8 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

82 dB

Input Offset Voltage Limit:

1900 uV

Minimum Voltage Gain:

13000

Minimum Slew Rate:

4.7 V/us

Nominal Slew Rate:

6 V/us

Peak Bias Current:

350 pA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

7 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

4 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

MIL-STD-883

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLV2772AMDR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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