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TLV2711IDBVTG4

Texas Instruments

TLV2711IDBVTG4 by Texas Instruments

TLV2711IDBVTG4 by Texas Instruments is a CMOS Operational Amplifier with low bias current (0.00006 uA) and micropower feature. It operates at a wide temperature range (-40 to 85 °C) making it suitable for industrial applications requiring high common mode rejection ratio (83 dB). The small outline package with shrink pitch and gull wing terminal form makes it ideal for space-constrained designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,443 parts In-Stock

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Digiode

USA . 2,045 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 1,931 parts In-Stock

1+ parts

$3.379

100+ parts

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$3.906

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1,931

$3.379

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$3.906

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DigiPath Technology Company

USA . 756 parts In-Stock

1+ parts

$3.721

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756

$3.721

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IDEA Electronic Components Group

UK . 1,331 parts In-Stock

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$3.797

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$3.417

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$3.797

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$3.417

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ChromeModa Solutions

Germany . 1,008 parts In-Stock

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$3.797

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$3.114

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1,008

$3.797

$3.114

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One Stop Electronics

USA . 1,286 parts In-Stock

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$4.410

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$4.410

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Semicontronic

India . 368 parts In-Stock

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$9.410

100+ parts

$9.175

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$9.128

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368

$9.410

$9.175

$9.128

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AZTECH Wire

Italy . 613 parts In-Stock

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$18.233

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Metaverse IC Inc.

Canada . 28,200 parts In-Stock

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Corphita

USA . 4,175 parts In-Stock

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Microchip USA

USA . 3,836 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,413 parts In-Stock

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Perfect Parts

USA . 2,061 parts In-Stock

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Overview

Experience superior performance and reliability with the TLV2711IDBVTG4 operational amplifier by Texas Instruments. Designed with cutting-edge technology, this compact device is perfect for a wide range of applications, from signal processing to sensor amplification. With its micropower capabilities and low-bias design, this amplifier offers exceptional value and efficiency. Trust in Texas Instruments' reputation for quality and innovation, and elevate your projects with the TLV2711IDBVTG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide durability and reliability for long-term use.

Maximum Input Offset Voltage: 3000 uV

Low input offset voltage ensures accuracy in signal processing applications.

Nominal Supply Voltage / Vsup (V): 3

Suitable voltage supply for various electronic circuits and systems.

Surface Mount: YES

Allows for easy installation on circuit boards, reducing assembly time.

Minimum Slew Rate: 0.005 V/us

Fast slew rate enables quick response to input signals, ideal for dynamic systems.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for amplifying differential input signals, suitable for a wide range of applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2711IDBVTG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

2.7/10 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

56 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

83 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

1000

Minimum Slew Rate:

0.005 V/us

Nominal Slew Rate:

0.025 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

150 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

25 μA

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Low Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

TLV2711IDBVTG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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