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TLV2472CDGNRG4

Texas Instruments

TLV2472CDGNRG4 by Texas Instruments

TLV2472CDGNRG4 by Texas Instruments is a dual operational amplifier with 2400uV max input offset voltage and 78dB nominal CMRR. Ideal for applications requiring low-bias current, it operates at -40 to 125 °C and has a unity gain bandwidth of 2800kHz.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,258 parts In-Stock

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Digiode

USA . 1,933 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 1,045 parts In-Stock

1+ parts

$2.634

100+ parts

$244.644

1k+ parts

$2.371

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1,045

$2.634

$244.644

$2.371

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DigiPath Technology Company

USA . 1,041 parts In-Stock

1+ parts

$2.901

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$2.669

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1,041

$2.901

$2.669

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ChromeModa Solutions

Germany . 5,544 parts In-Stock

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$2.960

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$2.427

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$2.960

$2.427

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IDEA Electronic Components Group

UK . 83 parts In-Stock

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$2.960

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$2.664

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83

$2.960

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$2.664

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One Stop Electronics

USA . 1,017 parts In-Stock

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$5.410

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$5.410

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AZTECH Wire

Italy . 691 parts In-Stock

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$14.184

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Component Stockers USA

USA . 327 parts In-Stock

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$99.990

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A-Z Elektronik GmbH

Germany . 10,639 parts In-Stock

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Corphita

USA . 4,759 parts In-Stock

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Microchip USA

USA . 958 parts In-Stock

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Overview

Unleash the power of precision with the TLV2472CDGNRG4 by Texas Instruments. Crafted with excellence, this operational amplifier is a game-changer in the field of electronics. Ideal for a wide range of applications, this high-quality product offers unmatched performance and reliability. Elevate your projects with ease and confidence, thanks to the exceptional value, benefits, and advantages that the TLV2472CDGNRG4 brings to the table. Trust in Texas Instruments for all your operational amplifier needs and experience innovation like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Maximum Input Offset Voltage: 2400 uV

High input offset voltage allows for precision in signal amplification and processing.

Surface Mount: YES

Surface mount capability makes it easy to integrate the amplifier into circuit boards efficiently.

Nominal Common Mode Reject Ratio: 78 dB

High common mode rejection ratio helps in minimizing noise interference in the circuit.

Power Supplies (V): +-1.35/+-3/2.7/6

Versatile power supply options allow for flexibility in different circuit design requirements.

Frequency Compensation: YES

Frequency compensation feature ensures stability and accuracy in signal processing.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance, ideal for battery-powered devices.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, this product is suitable for various analog signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2472CDGNRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±3/2.7/6 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.8 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

78 dB

Minimum Common Mode Rejection Ratio (CMRR ):

64 dB

Input Offset Voltage Limit:

2400 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

0.6 V/us

Nominal Slew Rate:

1.4 V/us

Maximum Input Offset Current (IIO):

50 pA

Peak Bias Current:

100 pA

Maximum Bias Current (IIB) @25 °C:

50 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

7 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

1.8 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.042 in (1.07 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

TLV2472CDGNRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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