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TLV2470IDBVRG4

Texas Instruments

TLV2470IDBVRG4 by Texas Instruments

TLV2470IDBVRG4 by Texas Instruments is an Operational Amplifier with 2400uV Max Input Offset Voltage, 78dB Nominal CMRR, and 1.5mA Max Supply Current. Ideal for automotive applications due to its low-bias design and compact package style.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Sea View Technologies

USA . 4,498 parts In-Stock

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Digiode

USA . 4,168 parts In-Stock

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Vyrian

USA . 3,867 parts In-Stock

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Bristol Electronics

USA . 3,603 parts In-Stock

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One Stop Electronics

USA . 863 parts In-Stock

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$0.410

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863

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Parana Technologies

USA . 1,051 parts In-Stock

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$4.434

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$4.860

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DigiPath Technology Company

USA . 882 parts In-Stock

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$4.882

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$4.882

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IDEA Electronic Components Group

UK . 1,429 parts In-Stock

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$4.982

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$4.484

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ChromeModa Solutions

Germany . 221 parts In-Stock

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$4.982

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$4.085

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AZTECH Wire

Italy . 461 parts In-Stock

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$10.512

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A-Z Elektronik GmbH

Germany . 5,666 parts In-Stock

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Microchip USA

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Corphita

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Overview

Experience superior performance and reliability with the TLV2470IDBVRG4 operational amplifier by Texas Instruments. As a leader in the industry, Texas Instruments delivers top-quality products that meet the highest standards. The TLV2470IDBVRG4 is perfect for a wide range of applications, providing exceptional precision and efficiency. Enhance your projects with this versatile and innovative component, offering unmatched value and benefits to customers looking for reliable amplification solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the operational amplifier, making it suitable for various applications.

Maximum Input Offset Voltage: 2400 uV

The low input offset voltage ensures accurate and precise signal processing in circuits.

Maximum Average Bias Current (IIB): 0.0003 uA

The low bias current helps in minimizing power consumption and maintaining stable operation.

Nominal Common Mode Reject Ratio: 78 dB

High common mode rejection ratio helps in eliminating interference and noise from the input signal for cleaner output.

Nominal Supply Voltage / Vsup (V): 3

An optimal supply voltage ensures the operational amplifier operates efficiently within its specified range.

Frequency Compensation: YES

Frequency compensation ensures stability and prevents oscillations in the amplifier circuit.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance for improved performance.

Amplifier Type: OPERATIONAL AMPLIFIER

Being a specialized operational amplifier, this product is designed for amplification and signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2470IDBVRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±3/2.7/6 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

2.8 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

78 dB

Minimum Common Mode Rejection Ratio (CMRR ):

61 dB

Input Offset Voltage Limit:

2400 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

0.6 V/us

Nominal Slew Rate:

1.4 V/us

Maximum Input Offset Current (IIO):

50 pA

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

50 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

7 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

1.5 mA

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

6

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Low Profile, Shrink Pitch

Package Equivalence Code:

TSOP6,.11,37

Trade Compliance

TLV2470IDBVRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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