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TLV2463QDRG4Q1

Texas Instruments

TLV2463QDRG4Q1 by Texas Instruments

TLV2463QDRG4Q1 by Texas Instruments is a CMOS Operational Amplifier with 2 functions, Vsup of +-1.35/+-3/2.7/6V, and 80dB CMRR. Ideal for automotive applications due to AEC-Q100 screening level and low bias current of 0.014uA @25C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 9,420 parts In-Stock

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Digiode

USA . 1,943 parts In-Stock

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One Stop Electronics

USA . 445 parts In-Stock

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$1.410

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Parana Technologies

USA . 2,125 parts In-Stock

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$5.146

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$477.882

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$4.631

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DigiPath Technology Company

USA . 2,209 parts In-Stock

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$5.666

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$5.213

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ChromeModa Solutions

Germany . 6,891 parts In-Stock

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$5.782

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$4.741

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IDEA Electronic Components Group

UK . 913 parts In-Stock

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$5.782

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$5.204

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913

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AZTECH Wire

Italy . 456 parts In-Stock

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$14.282

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Component Stockers USA

USA . 404 parts In-Stock

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$99.990

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Microchip USA

USA . 2,799 parts In-Stock

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Corphita

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Overview

Enhance your automotive applications with the Texas Instruments TLV2463QDRG4Q1 Operational Amplifiers. Manufactured with the highest quality standards, these Op Amps offer superior performance and reliability. With a wide range of supply voltages and high voltage gain bandwidth, this product provides unmatched value to customers seeking precision in their designs. Whether you're working on automotive electronics or industrial control systems, trust Texas Instruments for cutting-edge technology that delivers exceptional results.

Feature Benefit Bullets

Package Body Material : PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier, ensuring long-term reliability.

Maximum Input Offset Voltage : 2200 uV

Low offset voltage helps in achieving accurate amplification of signals without significant distortion.

Maximum Average Bias Current (IIB) : 0.075 uA

Low bias current helps in reducing power consumption and minimizing errors in signal processing.

Surface Mount : YES

Ease of installation and space-saving design for compact electronic applications.

Nominal Common Mode Reject Ratio : 80 dB

High common mode rejection ratio helps in rejecting noise and interference from the input signal.

Nominal Supply Voltage / Vsup (V) : 3

Standard supply voltage requirement for compatibility with a wide range of electronic circuits.

Minimum Voltage Gain : 28000

High voltage gain allows for efficient amplification of weak signals with minimal distortion.

Nominal Unity Gain Bandwidth : 5200 kHz

High unity gain bandwidth enables the operational amplifier to operate effectively across a wide range of frequencies.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2463QDRG4Q1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±3/2.7/6 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

2200 uV

Minimum Voltage Gain:

28000

Minimum Slew Rate:

0.8 V/us

Nominal Slew Rate:

1.6 V/us

Peak Bias Current:

75 nA

Maximum Bias Current (IIB) @25 °C:

14 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

2 mA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TLV2463QDRG4Q1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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