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TLV2463CDGSRG4

Texas Instruments

TLV2463CDGSRG4 by Texas Instruments

TLV2463CDGSRG4 by Texas Instruments is a dual operational amplifier with 10 terminals. It features a max input offset voltage of 2200 uV and a nominal voltage of 3 V. With a min slew rate of 0.8 V/us, it is ideal for applications requiring precise signal amplification in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,356 parts In-Stock

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7,356

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Chip Stock

USA . 3,750 parts In-Stock

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3,750

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Digiode

USA . 2,399 parts In-Stock

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2,399

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Nova Conductors

Japan . 47 parts In-Stock

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47

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Ampacity Inc.

Singapore . 1,247 parts In-Stock

1+ parts

$2.410

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$2.410

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One Stop Electronics

USA . 1,029 parts In-Stock

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$2.410

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$2.410

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Parana Technologies

USA . 1,679 parts In-Stock

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$4.446

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$4.874

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1,679

$4.446

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$4.874

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ChromeModa Solutions

Germany . 3,279 parts In-Stock

1+ parts

$4.995

100+ parts

$4.096

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3,279

$4.995

$4.096

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IDEA Electronic Components Group

UK . 1,620 parts In-Stock

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$4.995

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$4.496

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$4.995

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$4.496

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AZTECH Wire

Italy . 376 parts In-Stock

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$11.187

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A-Z Elektronik GmbH

Germany . 6,923 parts In-Stock

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Continental Prestige Electronics

USA . 5,208 parts In-Stock

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Microchip USA

USA . 3,266 parts In-Stock

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Corphita

USA . 2,809 parts In-Stock

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Argo Parts USA

USA . 2,802 parts In-Stock

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Kepictronics

USA . 339 parts In-Stock

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DigiPath Technology Company

USA . 219 parts In-Stock

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$4.503

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$4.503

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Experience unparalleled performance and precision with the TLV2463CDGSRG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and reliability. This operational amplifier is perfect for a wide range of applications, offering customers exceptional value and benefits. With its compact size, low power consumption, and high common-mode rejection ratio, the TLV2463CDGSRG4 delivers unmatched performance that will exceed your expectations. Trust Texas Instruments for all your operational amplifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material offers durability and protection for the operational amplifier, making it suitable for various applications.

Maximum Input Offset Voltage: 2200 uV

The low maximum input offset voltage ensures accurate signal processing, making this operational amplifier reliable for precision applications.

Maximum Average Bias Current (IIB): 0.025 uA

The low maximum average bias current ensures minimal power consumption and helps maintain stability in the operational amplifier circuit.

Surface Mount: YES

The surface mount capability allows for easy and compact installation on circuit boards, saving space and facilitating mass production.

No. of Functions: 2

Having two functions in a single operational amplifier provides versatility and flexibility in designing circuits, reducing the need for additional components.

Nominal Common Mode Reject Ratio: 80 dB

The high nominal common mode reject ratio indicates good rejection of common-mode signals, ensuring accurate amplification of the desired signals.

Nominal Supply Voltage / Vsup (V): 3

The nominal supply voltage of 3V makes this operational amplifier suitable for low-power applications and battery-operated devices.

Power Supplies (V): +-1.35/+-3/2.7/6

The wide range of power supply options allows flexibility in powering the operational amplifier, making it compatible with different system requirements.

Minimum Slew Rate: 0.8 V/us

The minimum slew rate of 0.8 V/us indicates the ability of the operational amplifier to respond quickly to changes in input signals, ensuring fast signal processing.

Maximum Supply Voltage Limit: 6 V

The maximum supply voltage limit of 6V ensures the operational amplifier is protected from overvoltage conditions, enhancing the reliability of the circuit.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2463CDGSRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±3/2.7/6 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Minimum Common Mode Rejection Ratio (CMRR ):

71 dB

Input Offset Voltage Limit:

2200 uV

Minimum Voltage Gain:

31622

Minimum Slew Rate:

0.8 V/us

Nominal Slew Rate:

1.6 V/us

Maximum Input Offset Current (IIO):

7 nA

Peak Bias Current:

25 nA

Maximum Bias Current (IIB) @25 °C:

14 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

1.3 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

10

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G10

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP10,.19,20

Trade Compliance

TLV2463CDGSRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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