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TLV2463CD

Texas Instruments

TLV2463CD by Texas Instruments

TLV2463CD by Texas Instruments is a dual operational amplifier with 2200uV max input offset voltage, 80dB nominal CMRR, and 5200kHz unity gain bandwidth. Ideal for precision signal conditioning in applications requiring low bias current and high common mode rejection such as sensor interfaces and data acquisition systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 6,400 parts In-Stock

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6,400

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Digiode

USA . 2,682 parts In-Stock

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2,682

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Vyrian

USA . 1,933 parts In-Stock

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1,933

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Cyclops Electronics Ltd

UK . 9 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 1,601 parts In-Stock

1+ parts

$1.179

100+ parts

-

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$1.983

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1,601

$1.179

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$1.983

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DigiPath Technology Company

USA . 2,029 parts In-Stock

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$1.298

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$1.195

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2,029

$1.298

$1.195

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ChromeModa Solutions

Germany . 2,440 parts In-Stock

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$1.325

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$1.086

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2,440

$1.325

$1.086

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IDEA Electronic Components Group

UK . 795 parts In-Stock

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$1.325

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$1.192

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795

$1.325

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$1.192

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One Stop Electronics

USA . 730 parts In-Stock

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$1.410

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730

$1.410

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Microchip USA

USA . 273 parts In-Stock

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$8.110

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$8.090

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$8.090

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$8.060

273

$8.110

$8.090

$8.090

$8.060

AZTECH Wire

Italy . 570 parts In-Stock

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$8.143

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570

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Corphita

USA . 1,737 parts In-Stock

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Perfect Parts

USA . 875 parts In-Stock

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875

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Assy Fe

Spain . 7 parts In-Stock

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Overview

Discover the power of precision and reliability with the TLV2463CD by Texas Instruments. As a leader in operational amplifiers, Texas Instruments delivers top-notch quality that ensures optimal performance in a variety of applications. From industrial automation to medical devices, this versatile product offers unmatched value, benefits, and advantages to customers seeking high-quality solutions. Trust in Texas Instruments for your operational amplifier needs and experience the difference in quality and performance.

Feature Benefit Bullets

Maximum Input Offset Voltage: 2200 uV

Low input offset voltage ensures accurate signal processing and minimal error in amplification.

Nominal Supply Voltage / Vsup (V): 3

Standard supply voltage of 3V makes it suitable for a wide range of applications and easy to integrate into existing systems.

Minimum Slew Rate: 0.8 V/us

Fast slew rate allows for quick response to input changes, making it ideal for dynamic applications.

Nominal Unity Gain Bandwidth: 5200 kHz

High unity gain bandwidth ensures stable operation at high frequencies, making it suitable for audio and other high-frequency applications.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance, making the op amp energy-efficient and versatile.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2463CD attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±3/2.7/6 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Minimum Common Mode Rejection Ratio (CMRR ):

71 dB

Input Offset Voltage Limit:

2200 uV

Minimum Voltage Gain:

31622

Minimum Slew Rate:

0.8 V/us

Nominal Slew Rate:

1.6 V/us

Maximum Input Offset Current (IIO):

7 nA

Peak Bias Current:

25 nA

Maximum Bias Current (IIB) @25 °C:

14 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

1.3 mA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TLV2463CD Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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