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TLV2462QPW

Texas Instruments

TLV2462QPW by Texas Instruments

TLV2462QPW by Texas Instruments is a CMOS Operational Amplifier with 2 functions, Vsup of +-3V, and 80dB CMRR. Ideal for automotive applications, it has a unity gain bandwidth of 5200kHz and low bias current of 0.014uA @25C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,312 parts In-Stock

1+ parts

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4,312

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Vyrian

USA . 4,132 parts In-Stock

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4,132

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 382 parts In-Stock

1+ parts

$5.214

100+ parts

-

1k+ parts

$5.826

10k+ parts

-

382

$5.214

-

$5.826

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ChromeModa Solutions

Germany . 2,985 parts In-Stock

1+ parts

$5.858

100+ parts

$4.804

1k+ parts

-

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2,985

$5.858

$4.804

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IDEA Electronic Components Group

UK . 59 parts In-Stock

1+ parts

$5.858

100+ parts

-

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$5.272

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59

$5.858

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$5.272

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AZTECH Wire

Italy . 352 parts In-Stock

1+ parts

$7.200

100+ parts

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352

$7.200

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One Stop Electronics

USA . 1,085 parts In-Stock

1+ parts

$7.410

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1,085

$7.410

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DigiPath Technology Company

USA . 1,087 parts In-Stock

1+ parts

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100+ parts

$5.282

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1,087

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$5.282

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Microchip USA

USA . 142 parts In-Stock

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142

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Corphita

USA . 72 parts In-Stock

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72

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Overview

Discover the unparalleled quality and precision of the TLV2462QPW operational amplifier by Texas Instruments. Designed with cutting-edge technology and expertise, this amplifier offers exceptional performance in a wide range of applications. With a compact and durable design, this amplifier provides a reliable solution for your electronic projects. Experience the value and benefits of Texas Instruments' superior engineering with the TLV2462QPW, delivering unmatched reliability and accuracy for all your operational amplifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the Op Amp, making it suitable for various applications.

Maximum Input Offset Voltage: 2200 uV

Low input offset voltage ensures accurate and stable performance in signal processing.

Surface Mount: YES

Ease of installation and space-saving design for modern electronic devices.

Nominal Common Mode Reject Ratio: 80 dB

High rejection ratio ensures minimal noise interference from common mode signals.

Nominal Supply Voltage / Vsup (V): 3

Operates efficiently within a standard voltage range, making it compatible with many systems.

Minimum Slew Rate: 0.8 V/us

Fast response time allows for quick signal amplification and processing.

Nominal Unity Gain Bandwidth: 5200 kHz

High bandwidth capability enables the Op Amp to handle a wide range of frequencies effectively.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2462QPW attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±3/2.7/6 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

2200 uV

Minimum Voltage Gain:

28000

Minimum Slew Rate:

0.8 V/us

Nominal Slew Rate:

1.6 V/us

Peak Bias Current:

75 nA

Maximum Bias Current (IIB) @25 °C:

14 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

2 mA

Physical Characteristics

Length:

0.173 in (4.4 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.25

Trade Compliance

TLV2462QPW Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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