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TLV2462CDGKG4

Texas Instruments

TLV2462CDGKG4 by Texas Instruments

TLV2462CDGKG4 by Texas Instruments is a dual operational amplifier with 2200uV max input offset voltage, 80dB CMRR, and 5200kHz unity gain bandwidth. Ideal for precision signal conditioning in commercial applications due to its low bias current and high slew rate of 1.6V/us.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

USA . 6,416 parts In-Stock

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Digiode

USA . 409 parts In-Stock

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SPM Sales

USA . 320 parts In-Stock

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Parana Technologies

USA . 774 parts In-Stock

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$1.529

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$2.185

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774

$1.529

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ChromeModa Solutions

Germany . 3,595 parts In-Stock

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$1.718

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$1.409

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IDEA Electronic Components Group

UK . 1,326 parts In-Stock

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$1.718

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$1.546

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One Stop Electronics

USA . 614 parts In-Stock

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$4.410

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614

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AZTECH Wire

Italy . 788 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,970 parts In-Stock

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GreenTree Electronics

Israel . 7,395 parts In-Stock

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Corphita

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Microchip USA

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DigiPath Technology Company

USA . 501 parts In-Stock

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$1.549

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Overview

Unlock the power of precision with the TLV2462CDGKG4 by Texas Instruments. As a leader in operational amplifiers, Texas Instruments delivers top-notch quality and reliability. Whether you're designing audio equipment, medical devices, or industrial control systems, this dual-function Op Amp offers unparalleled performance with minimal bias current and high common mode rejection ratio. Experience the peace of mind that comes with using a trusted brand like Texas Instruments for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 2200 uV

The low input offset voltage ensures accurate and precise signal amplification.

Maximum Average Bias Current (IIB): 0.025 uA

The low bias current helps in minimizing power consumption and maintaining stability.

Surface Mount: YES

The surface mount option makes it easy to integrate this operational amplifier into compact electronic designs.

Nominal Common Mode Reject Ratio: 80 dB

High common mode rejection ratio helps in reducing noise and interference in the amplifier's output signal.

Nominal Supply Voltage / Vsup (V): 3

Operating at a lower supply voltage makes this operational amplifier suitable for applications with limited power supply.

Minimum Slew Rate: 0.8 V/us

The fast slew rate allows the operational amplifier to respond quickly to changes in input signals.

Nominal Unity Gain Bandwidth: 5200 kHz

High unity gain bandwidth ensures that the operational amplifier can accurately amplify signals across a wide range of frequencies.

Technology: CMOS

The CMOS technology used in this operational amplifier provides low power consumption and high input impedance.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, this product is suitable for a wide range of applications such as signal processing and control systems.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2462CDGKG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±3/2.7/6 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Minimum Common Mode Rejection Ratio (CMRR ):

71 dB

Input Offset Voltage Limit:

2200 uV

Minimum Voltage Gain:

31622

Minimum Slew Rate:

0.8 V/us

Nominal Slew Rate:

1.6 V/us

Maximum Input Offset Current (IIO):

7 nA

Peak Bias Current:

25 nA

Maximum Bias Current (IIB) @25 °C:

14 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

1.3 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold Silver

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

TLV2462CDGKG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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