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TLV2460QPWRQ1

Texas Instruments

TLV2460QPWRQ1 by Texas Instruments

TLV2460QPWRQ1 by Texas Instruments is an Operational Amplifier with 2200uV Max Input Offset Voltage, 80dB CMRR, and 5200kHz Unity Gain Bandwidth. Ideal for automotive applications due to AEC-Q100 screening level and low bias current of 0.000075uA.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,392 parts In-Stock

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3,392

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Vyrian

USA . 2,091 parts In-Stock

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2,091

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Distributors (Availability)

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One Stop Electronics

USA . 530 parts In-Stock

1+ parts

$3.410

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530

$3.410

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Parana Technologies

USA . 2,364 parts In-Stock

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$5.717

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$6.510

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2,364

$5.717

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$6.510

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DigiPath Technology Company

USA . 1,383 parts In-Stock

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$6.296

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1,383

$6.296

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ChromeModa Solutions

Germany . 3,315 parts In-Stock

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$6.424

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$5.268

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3,315

$6.424

$5.268

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IDEA Electronic Components Group

UK . 160 parts In-Stock

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$6.424

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$5.782

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160

$6.424

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$5.782

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AZTECH Wire

Italy . 898 parts In-Stock

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$13.006

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898

$13.006

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Corphita

USA . 3,477 parts In-Stock

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Microchip USA

USA . 499 parts In-Stock

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499

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Overview

Looking for a high-quality Operational Amplifier? Look no further than the TLV2460QPWRQ1 by Texas Instruments. With its advanced technology and automotive-grade temperature grade, this Op Amp offers unparalleled performance and reliability. Whether you're designing automotive systems, industrial controls, or consumer electronics, this compact and versatile amplifier will exceed your expectations. Get superior precision and efficiency with the TLV2460QPWRQ1 - a game-changer in the world of operational amplifiers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for the package, ensuring long-term reliability and ease of handling.

Maximum Input Offset Voltage: 2200 uV

Low input offset voltage allows for accurate signal processing and minimal errors in the output.

Maximum Average Bias Current (IIB): 0.000075 uA

Low bias current minimizes power consumption and reduces signal distortion.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during production.

Nominal Common Mode Reject Ratio: 80 dB

High common mode rejection ratio ensures minimal interference from common-mode signals, resulting in a clean output.

Nominal Supply Voltage / Vsup (V): 3

Operates efficiently at a nominal supply voltage of 3V, suitable for low power applications.

Minimum Slew Rate: 0.8 V/us

Fast slew rate enables quick response to input signal changes, making it suitable for dynamic signal processing applications.

Frequency Compensation: YES

Frequency compensation ensures stable performance across a wide range of frequencies, making it versatile for different applications.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance, making it ideal for battery-powered devices.

Amplifier Type: OPERATIONAL AMPLIFIER

Dedicated operational amplifier design for precision signal processing and amplification tasks.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2460QPWRQ1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±3/2.7/6 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

2200 uV

Minimum Voltage Gain:

28000

Minimum Slew Rate:

0.8 V/us

Nominal Slew Rate:

1.6 V/us

Peak Bias Current:

75 pA

Maximum Bias Current (IIB) @25 °C:

14 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

1 mA

Physical Characteristics

Length:

0.173 in (4.4 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.25

Trade Compliance

TLV2460QPWRQ1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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