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TLV2460AQPWRQ1

Texas Instruments

TLV2460AQPWRQ1 by Texas Instruments

TLV2460AQPWRQ1 by Texas Instruments is an Operational Amplifier with 1700uV Max Input Offset Voltage, 80dB CMRR, and 5200kHz Unity Gain Bandwidth. Ideal for automotive applications due to AEC-Q100 screening and low bias current of 0.000075uA.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,120 parts In-Stock

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Digiode

USA . 600 parts In-Stock

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600

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Distributors (Availability)

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One Stop Electronics

USA . 697 parts In-Stock

1+ parts

$4.410

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697

$4.410

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Parana Technologies

USA . 918 parts In-Stock

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$5.124

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$475.816

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$4.611

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918

$5.124

$475.816

$4.611

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DigiPath Technology Company

USA . 133 parts In-Stock

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$5.642

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$5.191

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133

$5.642

$5.191

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IDEA Electronic Components Group

UK . 2,362 parts In-Stock

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$5.757

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$5.181

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2,362

$5.757

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ChromeModa Solutions

Germany . 288 parts In-Stock

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$5.757

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$4.721

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288

$5.757

$4.721

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AZTECH Wire

Italy . 633 parts In-Stock

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$12.553

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633

$12.553

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Component Stockers USA

USA . 582 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 28,723 parts In-Stock

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Corphita

USA . 4,283 parts In-Stock

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Microchip USA

USA . 4,225 parts In-Stock

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Overview

Enhance your automotive applications with the high-quality TLV2460AQPWRQ1 operational amplifier by Texas Instruments. Designed with precision and reliability in mind, this compact and versatile op amp offers exceptional performance with a nominal unity gain bandwidth of 5200 kHz and a minimum voltage gain of 28000. Whether you're working on engine management systems, safety features, or audio amplification in vehicles, this AEC-Q100 qualified component guarantees optimal functionality and efficiency. Trust Texas Instruments to deliver superior solutions for your automotive electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the product lightweight and cost-effective.

Maximum Input Offset Voltage: 1700 uV

The low input offset voltage ensures high accuracy in signal processing applications.

Maximum Average Bias Current (IIB): 0.000075 uA

The low bias current minimizes power consumption and improves efficiency.

Surface Mount: YES

The surface mount capability allows for easy installation on PCBs, saving space and reducing assembly time.

Nominal Common Mode Reject Ratio: 80 dB

The high common mode rejection ratio ensures better rejection of noise and interference in the signal.

Minimum Slew Rate: 0.8 V/us

The fast slew rate allows for quick response to input signal changes, making it suitable for high-frequency applications.

Nominal Unity Gain Bandwidth: 5200 kHz

The high unity gain bandwidth indicates the amplifier's ability to maintain a flat frequency response at various gain levels.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2460AQPWRQ1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±3/2.7/6 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5.2 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

1700 uV

Minimum Voltage Gain:

28000

Minimum Slew Rate:

0.8 V/us

Nominal Slew Rate:

1.6 V/us

Peak Bias Current:

75 pA

Maximum Bias Current (IIB) @25 °C:

14 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

1 mA

Physical Characteristics

Length:

0.173 in (4.4 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.25

Trade Compliance

TLV2460AQPWRQ1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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