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TLV2453IDGSG4

Texas Instruments

TLV2453IDGSG4 by Texas Instruments

TLV2453IDGSG4 by Texas Instruments is a dual operational amplifier with 2000uV max input offset voltage, 80dB CMRR, and 63095 min voltage gain. Ideal for automotive applications due to its micropower technology and wide temperature range of -40 to 125 °C. Suitable for surface mount designs in compact spaces with small outline package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,184 parts In-Stock

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Vyrian

USA . 2,467 parts In-Stock

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2,467

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 294 parts In-Stock

1+ parts

$1.410

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294

$1.410

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AZTECH Wire

Italy . 246 parts In-Stock

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$6.393

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$6.393

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Parana Technologies

USA . 7 parts In-Stock

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$6.544

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$7.285

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7

$6.544

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$7.285

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DigiPath Technology Company

USA . 2,110 parts In-Stock

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$7.206

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$6.629

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2,110

$7.206

$6.629

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ChromeModa Solutions

Germany . 3,562 parts In-Stock

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$7.353

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$6.029

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3,562

$7.353

$6.029

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IDEA Electronic Components Group

UK . 964 parts In-Stock

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$7.353

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$6.618

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964

$7.353

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Microchip USA

USA . 4,452 parts In-Stock

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Corphita

USA . 2,042 parts In-Stock

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Overview

Unleash the power of precision with the TLV2453IDGSG4 by Texas Instruments! This operational amplifier offers superior quality and reliability, making it the perfect choice for a wide range of applications. From automotive to industrial settings, this amplifier delivers exceptional performance with minimal power consumption. With its compact design and advanced technology, the TLV2453IDGSG4 provides unmatched value and efficiency for all your amplification needs. Elevate your projects to new heights with Texas Instruments at the forefront of innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the product suitable for various applications.

Maximum Input Offset Voltage: 2000 uV

Low input offset voltage ensures accuracy in signal processing.

Maximum Average Bias Current (IIB): 0.000007 uA

Low bias current results in minimal power consumption and improved efficiency.

Surface Mount: YES

Allows for easy installation and space-saving on PCBs.

Nominal Common Mode Reject Ratio: 80 dB

High common mode rejection ratio helps in eliminating unwanted noise and interference.

Nominal Supply Voltage / Vsup (V): 3

Stable supply voltage ensures consistent performance in various operating conditions.

Frequency Compensation: YES

Ensures stability and proper functioning of the amplifier over a range of frequencies.

Technology: CMOS

CMOS technology offers low power consumption and high-speed operation.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for amplifying and processing signals accurately in various electronic circuits.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2453IDGSG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±3/2.7/6 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

200 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

2000 uV

Minimum Voltage Gain:

63095

Minimum Slew Rate:

0.02 V/us

Nominal Slew Rate:

0.11 V/us

Maximum Input Offset Current (IIO):

450 pA

Peak Bias Current:

7 pA

Maximum Bias Current (IIB) @25 °C:

5 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

7 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

84 μA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

10

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G10

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP10,.19,20

Trade Compliance

TLV2453IDGSG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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