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TLV2444CDRG4

Texas Instruments

TLV2444CDRG4 by Texas Instruments

TLV2444CDRG4 by Texas Instruments is a CMOS Operational Amplifier with 4 functions, low bias current of 0.00006 uA, and unity gain bandwidth of 1810 kHz. Ideal for micropower applications requiring high voltage supply up to +-10V in commercial temperature grade settings. Package style is small outline with gull wing terminals for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,752 parts In-Stock

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Digiode

USA . 3,314 parts In-Stock

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One Stop Electronics

USA . 916 parts In-Stock

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$1.410

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$1.410

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Parana Technologies

USA . 442 parts In-Stock

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$3.367

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$3.894

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DigiPath Technology Company

USA . 104 parts In-Stock

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$3.707

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$3.411

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ChromeModa Solutions

Germany . 6,553 parts In-Stock

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$3.783

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$3.102

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IDEA Electronic Components Group

UK . 2,009 parts In-Stock

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$3.783

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$3.405

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AZTECH Wire

Italy . 817 parts In-Stock

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$7.426

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Component Stockers USA

USA . 325 parts In-Stock

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$99.990

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Microchip USA

USA . 11,001 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 9,612 parts In-Stock

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Corphita

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Overview

Unlock the potential of your electronic designs with the TLV2444CDRG4 by Texas Instruments, a high-quality operational amplifier offering unparalleled performance and reliability. Manufactured by the industry leader in semiconductor solutions, this component is ideal for a wide range of applications in industries such as automotive, consumer electronics, and industrial automation. With low bias current, micropower technology, and precise frequency compensation, this op amp delivers exceptional value, ensuring optimal functionality and efficiency in your projects. Trust Texas Instruments to provide innovative solutions that exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the internal components of the op amp, making it suitable for various applications.

Maximum Input Offset Voltage: 2000 uV

Low input offset voltage ensures accurate and precise signal processing, making it ideal for high-performance circuits.

Surface Mount: YES

Surface mount design allows for easy and efficient installation on printed circuit boards, saving space and reducing assembly time.

Nominal Common Mode Reject Ratio: 75 dB

High common mode rejection ratio helps in eliminating noise and interference from the input signal, resulting in improved signal quality.

Power Supplies (V): +-1.35/+-5/2.7/10

Versatile power supply options make this op amp suitable for a wide range of voltage requirements in different applications.

Minimum Slew Rate: 0.65 V/us

Fast slew rate allows for quick response to input signal changes, making it ideal for applications requiring high speed and accuracy.

Frequency Compensation: YES

Frequency compensation enhances stability and prevents oscillations, ensuring reliable operation in various circuit configurations.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance, making the op amp suitable for battery-powered applications and signal conditioning.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, this product is designed for precision signal processing, amplification, and filtering applications, offering versatility and performance.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2444CDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±5/2.7/10 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.81 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

75 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

2000 uV

Minimum Voltage Gain:

400

Minimum Slew Rate:

0.65 V/us

Nominal Slew Rate:

1.4 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

60 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

4.4 mA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TLV2444CDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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