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TLV2442QPWRQ1

Texas Instruments

TLV2442QPWRQ1 by Texas Instruments

TLV2442QPWRQ1 by Texas Instruments is a CMOS Operational Amplifier with 2 functions, offering low bias and high gain. It has a max input offset voltage of 2500 uV, operates at temperatures from -40 to 125 °C, and is ideal for automotive applications due to AEC-Q100 screening.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 4,690 parts In-Stock

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Digiode

USA . 3,105 parts In-Stock

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One Stop Electronics

USA . 957 parts In-Stock

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$0.410

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957

$0.410

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Parana Technologies

USA . 715 parts In-Stock

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$5.179

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$5.780

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DigiPath Technology Company

USA . 2,262 parts In-Stock

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$5.703

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$5.246

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ChromeModa Solutions

Germany . 2,362 parts In-Stock

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$5.819

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$4.772

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IDEA Electronic Components Group

UK . 441 parts In-Stock

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$5.819

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$5.237

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AZTECH Wire

Italy . 826 parts In-Stock

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$5.986

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Component Stockers USA

USA . 242 parts In-Stock

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$99.990

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Microchip USA

USA . 5,658 parts In-Stock

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Corphita

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Kepictronics

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Overview

Discover the unparalleled performance and reliability of the TLV2442QPWRQ1 by Texas Instruments. This operational amplifier is designed with precision and quality in mind, making it the perfect choice for automotive applications. With a wide range of supply voltage options and low-bias operation, this op amp offers exceptional value and benefits to customers seeking top-notch performance in their designs. Trust Texas Instruments for innovative solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy body material provides durability and protection for the internal components of the operational amplifier, ensuring long-term reliability.

Maximum Input Offset Voltage: 2500 uV

Low input offset voltage helps in minimizing errors and inaccuracies in the amplification process, making this operational amplifier suitable for precision applications.

Maximum Average Bias Current (IIB): 0.00026 uA

Low bias current ensures minimal power consumption and reduces thermal effects in the circuit, maintaining stability and accuracy of the operational amplifier.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs, saving space and simplifying assembly processes.

Nominal Common Mode Reject Ratio: 75 dB

High common mode rejection ratio helps in rejecting unwanted noise and interference, resulting in a clean and accurate output signal.

Nominal Supply Voltage / Vsup (V): 3

Suitable nominal supply voltage of 3V enables compatibility with a wide range of electronic devices and applications.

Technology: CMOS

CMOS technology offers low power consumption, high input impedance, and wide voltage range operation, making the operational amplifier energy-efficient and versatile.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows the operational amplifier to perform reliably in various environmental conditions, including automotive applications where temperature fluctuations may occur.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2442QPWRQ1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±5/2.7/10 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.75 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

75 dB

Input Offset Voltage Limit:

2500 uV

Minimum Voltage Gain:

400

Minimum Slew Rate:

0.4 V/us

Nominal Slew Rate:

1.3 V/us

Peak Bias Current:

260 pA

Maximum Bias Current (IIB) @25 °C:

1 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

2.2 mA

Physical Characteristics

Length:

0.173 in (4.4 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.25

Trade Compliance

TLV2442QPWRQ1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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