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TLV2442IDR

Texas Instruments

TLV2442IDR by Texas Instruments

TLV2442IDR by Texas Instruments is a CMOS Operational Amplifier with 2 functions, offering low bias current of 0.00006 uA and high common mode rejection ratio of 90 dB. Ideal for industrial applications requiring precise voltage feedback amplification in compact designs.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 3,721 parts In-Stock

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Digiode

USA . 2,968 parts In-Stock

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Parana Technologies

USA . 1,973 parts In-Stock

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$1.099

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$1.938

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IDEA Electronic Components Group

UK . 687 parts In-Stock

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$1.235

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$1.112

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ChromeModa Solutions

Germany . 664 parts In-Stock

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$1.235

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$1.013

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One Stop Electronics

USA . 450 parts In-Stock

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$4.410

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AZTECH Wire

Italy . 666 parts In-Stock

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$11.859

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A-Z Elektronik GmbH

Germany . 8,216 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,614 parts In-Stock

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Microchip USA

USA . 3,406 parts In-Stock

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Benley Electronics

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Corphita

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DigiPath Technology Company

USA . 177 parts In-Stock

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Overview

Enhance your electronic designs with the TLV2442IDR operational amplifier from Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers high-quality components for a wide range of applications. The TLV2442IDR offers low input offset voltage, minimal bias current, and excellent temperature stability. With its compact design and versatile performance, this operational amplifier is ideal for precision instrumentation, sensor interfaces, and audio processing applications. Trust Texas Instruments to provide reliable solutions that meet your needs and exceed your expectations. Elevate your projects with the TLV2442IDR today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and cost-effective.

Maximum Input Offset Voltage: 2000 uV

The low maximum input offset voltage ensures high precision and accuracy in signal processing.

Surface Mount: YES

The surface mount feature allows for easy installation and space-saving on PCBs.

Nominal Common Mode Reject Ratio: 90 dB

The high common-mode rejection ratio helps in eliminating noise and interference for a clean signal output.

Nominal Supply Voltage / Vsup (V): 3

The low nominal supply voltage requirement makes it suitable for low-power applications.

Maximum Slew Rate: 0.65 V/us

The high slew rate allows for fast response and quick signal amplification.

Maximum Supply Voltage Limit: 12 V

The high supply voltage limit provides flexibility in the power supply options for the amplifier.

Technology: CMOS

The CMOS technology used in the amplifier ensures low power consumption and high noise immunity.

Amplifier Type: OPERATIONAL AMPLIFIER

The operational amplifier design ensures high gain and stability in various signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2442IDR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±5/2.7/10 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

52 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

2000 uV

Minimum Voltage Gain:

700

Minimum Slew Rate:

0.65 V/us

Nominal Slew Rate:

0.02 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

150 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

300 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLV2442IDR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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