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TLV2434AQDRQ1

Texas Instruments

TLV2434AQDRQ1 by Texas Instruments

TLV2434AQDRQ1 by Texas Instruments is a CMOS Operational Amplifier with 4 functions, 950uV max input offset voltage, and 90dB nominal CMRR. Ideal for automotive applications due to AEC-Q100 screening level and low bias current of 0.0003uA at 25C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,802 parts In-Stock

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Vyrian

USA . 2,449 parts In-Stock

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2,449

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Distributors (Availability)

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Parana Technologies

USA . 1,131 parts In-Stock

1+ parts

$3.601

100+ parts

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$4.118

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1,131

$3.601

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$4.118

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ChromeModa Solutions

Germany . 5,841 parts In-Stock

1+ parts

$4.046

100+ parts

$3.318

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$4.046

$3.318

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IDEA Electronic Components Group

UK . 112 parts In-Stock

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$4.046

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$3.641

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112

$4.046

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$3.641

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One Stop Electronics

USA . 755 parts In-Stock

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$5.410

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755

$5.410

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Microchip USA

USA . 4,559 parts In-Stock

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$11.820

100+ parts

$11.750

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$11.720

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$11.680

4,559

$11.820

$11.750

$11.720

$11.680

AZTECH Wire

Italy . 315 parts In-Stock

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$18.170

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315

$18.170

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Perfect Parts

USA . 5,600 parts In-Stock

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Corphita

USA . 3,785 parts In-Stock

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DigiPath Technology Company

USA . 327 parts In-Stock

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$3.648

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327

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Overview

Enhance your automotive applications with the TLV2434AQDRQ1 by Texas Instruments, a high-quality operational amplifier designed to meet AEC-Q100 standards. With its low bias current and micropower capabilities, this amplifier offers superior performance and reliability in a compact package. Whether you're working on power management systems or sensor interfaces, this versatile component provides the precision and efficiency you need to elevate your designs. Trust Texas Instruments for innovative solutions that deliver exceptional value and performance every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for long-term use.

Maximum Input Offset Voltage: 950 uV

Ensures accurate and precise output signals.

Surface Mount: YES

Allows for easy installation on circuit boards.

Nominal Common Mode Reject Ratio: 90 dB

Provides high rejection of common mode noise for clean signal output.

Maximum Supply Voltage Limit: 12 V

Allows for versatile use in different voltage applications.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high efficiency.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for operational amplifier applications for optimal performance.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2434AQDRQ1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

500 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

950 uV

Minimum Voltage Gain:

500

Minimum Slew Rate:

0.1 V/us

Nominal Slew Rate:

0.25 V/us

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

500 μA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TLV2434AQDRQ1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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