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TLV2422QDR

Texas Instruments

TLV2422QDR by Texas Instruments

TLV2422QDR by Texas Instruments is a dual operational amplifier with low bias current (0.0003 uA) and micropower feature. It operates at a wide temperature range (-40 to 125 °C) making it suitable for automotive applications. With a nominal unity gain bandwidth of 46 kHz, this CMOS technology-based op amp is ideal for precision signal processing in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,315 parts In-Stock

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4,315

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Digiode

USA . 904 parts In-Stock

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904

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Distributors (Availability)

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One Stop Electronics

USA . 598 parts In-Stock

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$3.410

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598

$3.410

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Parana Technologies

USA . 518 parts In-Stock

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$3.439

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$3.964

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518

$3.439

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DigiPath Technology Company

USA . 1,687 parts In-Stock

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$3.787

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$3.484

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1,687

$3.787

$3.484

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ChromeModa Solutions

Germany . 3,139 parts In-Stock

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$3.864

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$3.168

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3,139

$3.864

$3.168

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IDEA Electronic Components Group

UK . 618 parts In-Stock

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$3.864

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$3.478

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618

$3.864

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$3.478

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AZTECH Wire

Italy . 455 parts In-Stock

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$6.643

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455

$6.643

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Microchip USA

USA . 4,933 parts In-Stock

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Corphita

USA . 1,511 parts In-Stock

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Overview

Experience top-tier quality and performance with the TLV2422QDR operational amplifier by Texas Instruments. Designed with precision and reliability in mind, this product is perfect for a wide range of applications in various industries. Whether you are looking for efficiency in your automotive systems or precision in your consumer electronics, this op amp delivers unmatched value and benefits to customers. Trust in Texas Instruments to provide you with the cutting-edge technology you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability to the product, making it suitable for various applications.

Maximum Input Offset Voltage: 2500 uV

Low input offset voltage ensures accurate and precise signal processing.

Maximum Average Bias Current (IIB): 0.0003 uA

Low bias current minimizes power consumption and improves overall efficiency.

Surface Mount: YES

Surface mount feature makes installation and integration easy and efficient.

Nominal Common Mode Reject Ratio: 83 dB

High common mode rejection ratio helps in reducing noise and interference in the signal.

Nominal Supply Voltage / Vsup (V): 3

Operates at a nominal supply voltage of 3V, suitable for low power applications.

Frequency Compensation: YES

Frequency compensation ensures stability and reliable performance over a range of frequencies.

Low-Bias: YES

Low bias current helps in minimizing errors and improving accuracy in signal processing.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product efficient and reliable.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifiers are versatile and widely used in various applications such as signal conditioning, filtering, and amplification.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2422QDR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±5/2.7/10 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

46 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

83 dB

Input Offset Voltage Limit:

2500 uV

Minimum Voltage Gain:

2000

Minimum Slew Rate:

0.008 V/us

Nominal Slew Rate:

0.02 V/us

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

175 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLV2422QDR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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