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TLV2422AQDRG4

Texas Instruments

TLV2422AQDRG4 by Texas Instruments

TLV2422AQDRG4 by Texas Instruments is a CMOS Operational Amplifier with low bias current (0.0003 uA) and high common mode rejection ratio (83 dB). Ideal for automotive applications, it operates at temperatures ranging from -40 to 125 °C and has a unity gain bandwidth of 46 kHz.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 5,007 parts In-Stock

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Digiode

USA . 4,921 parts In-Stock

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One Stop Electronics

USA . 1,412 parts In-Stock

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$5.410

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Parana Technologies

USA . 1,540 parts In-Stock

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$6.742

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DigiPath Technology Company

USA . 1,932 parts In-Stock

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$6.564

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$6.039

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IDEA Electronic Components Group

UK . 2,287 parts In-Stock

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ChromeModa Solutions

Germany . 148 parts In-Stock

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$5.492

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AZTECH Wire

Italy . 287 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 29,245 parts In-Stock

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Kepictronics

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Microchip USA

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Corphita

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Overview

Enhance your electronic designs with the Texas Instruments TLV2422AQDRG4 operational amplifiers. Known for their high-quality components and reliable performance, these op amps offer exceptional precision and efficiency for a wide range of applications. Whether you're working on automotive electronics, medical devices, or industrial automation systems, the TLV2422AQDRG4 delivers unmatched value, benefits, and advantages to meet your specific needs. Trust Texas Instruments for innovative solutions that elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 1800 uV

Low input offset voltage ensures accuracy in signal amplification and minimizes errors in the output.

Surface Mount: YES

Allows for easy installation on circuit boards, saving space and simplifying assembly processes.

Nominal Common Mode Reject Ratio: 83 dB

High common mode rejection ratio helps in eliminating unwanted common-mode signals, improving the quality of the output signal.

Nominal Supply Voltage / Vsup (V): 3

Operates at a low supply voltage, making it suitable for low-power applications and reducing power consumption.

Minimum Slew Rate: 0.008 V/us

Fast slew rate allows for quick response to input signal changes, ensuring high-speed and accurate signal processing.

Technology: CMOS

CMOS technology offers low power consumption, high input impedance, and good noise immunity, making it suitable for various applications.

Maximum Operating Temperature: 125 °C

Wide operating temperature range makes the operational amplifier suitable for use in harsh environments or automotive applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2422AQDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±5/2.7/10 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

46 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

83 dB

Input Offset Voltage Limit:

1800 uV

Minimum Voltage Gain:

2000

Minimum Slew Rate:

0.008 V/us

Nominal Slew Rate:

0.02 V/us

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

175 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLV2422AQDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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