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TLV2404CPWG4

Texas Instruments

TLV2404CPWG4 by Texas Instruments

TLV2404CPWG4 by Texas Instruments is a CMOS Operational Amplifier with 4 functions, Vsup of +-1.25/+-8/2.5/16V, and 1500uV Max Input Offset Voltage. It is ideal for applications requiring low-bias current amplification in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,543 parts In-Stock

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Digiode

USA . 3,733 parts In-Stock

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3,733

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Distributors (Availability)

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One Stop Electronics

USA . 715 parts In-Stock

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$4.410

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715

$4.410

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Parana Technologies

USA . 1,248 parts In-Stock

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$6.023

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$6.796

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$6.023

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DigiPath Technology Company

USA . 1,610 parts In-Stock

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$6.632

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$6.101

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$6.632

$6.101

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ChromeModa Solutions

Germany . 2,125 parts In-Stock

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$6.767

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$5.549

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2,125

$6.767

$5.549

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IDEA Electronic Components Group

UK . 1,955 parts In-Stock

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$6.767

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$6.090

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1,955

$6.767

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$6.090

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AZTECH Wire

Italy . 709 parts In-Stock

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$11.742

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709

$11.742

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Corphita

USA . 3,366 parts In-Stock

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Microchip USA

USA . 1,992 parts In-Stock

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Overview

Unleash the power of precision with the TLV2404CPWG4 by Texas Instruments, a top-tier manufacturer known for its high-quality operational amplifiers (Op Amps). Perfect for a wide range of applications, this cutting-edge product offers unbeatable performance and reliability. Experience seamless functionality and unparalleled accuracy with its advanced features, making it a must-have for engineers and designers looking to elevate their projects. Elevate your designs with the TLV2404CPWG4 and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier, making it suitable for various applications.

Maximum Input Offset Voltage: 1500 uV

Low input offset voltage ensures high accuracy in signal processing, making the amplifier suitable for precision applications.

Nominal Common Mode Reject Ratio: 120 dB

High common mode rejection ratio helps in eliminating unwanted noise and interference, resulting in clean and accurate output signals.

Nominal Supply Voltage / Vsup (V): 2.7

Low supply voltage requirement makes this operational amplifier energy-efficient and suitable for battery-powered applications.

Technology: CMOS

CMOS technology ensures low power consumption, high input impedance, and wide bandwidth, making the operational amplifier versatile and efficient.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture offers high linearity, stability, and bandwidth, making the operational amplifier suitable for high-performance applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2404CPWG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.25/±8/2.5/16 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5.5 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

120 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

1500 uV

Minimum Voltage Gain:

130000

Nominal Slew Rate:

2500 V/us

Maximum Input Offset Current (IIO):

250 pA

Peak Bias Current:

350 pA

Maximum Bias Current (IIB) @25 °C:

300 pA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

17 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

3.8 μA

Physical Characteristics

Length:

0.197 in (5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

14

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP14,.25

Trade Compliance

TLV2404CPWG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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