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TLV2373IDRG4

Texas Instruments

TLV2373IDRG4 by Texas Instruments

TLV2373IDRG4 by Texas Instruments is a dual operational amplifier with 6000uV max input offset voltage, 1.32mA max supply current, and 3000kHz unity gain bandwidth. Ideal for automotive applications due to its low-bias CMOS technology and wideband architecture.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,471 parts In-Stock

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Digiode

USA . 3,225 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,500 parts In-Stock

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Holdelec - ElecDif-Pro

France . 2,500 parts In-Stock

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One Stop Electronics

USA . 475 parts In-Stock

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$1.410

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Parana Technologies

USA . 2,062 parts In-Stock

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$6.584

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$7.324

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DigiPath Technology Company

USA . 801 parts In-Stock

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$7.250

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801

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ChromeModa Solutions

Germany . 3,821 parts In-Stock

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$7.398

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$6.066

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IDEA Electronic Components Group

UK . 163 parts In-Stock

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$7.398

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$6.658

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AZTECH Wire

Italy . 861 parts In-Stock

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$10.399

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Corphita

USA . 4,697 parts In-Stock

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Microchip USA

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Overview

Enhance your electronic designs with the Texas Instruments TLV2373IDRG4 operational amplifier. Crafted by a trusted manufacturer, this versatile component offers precision and reliability for a wide range of applications. With low bias current, high common mode rejection ratio, and wideband capabilities, this op amp delivers exceptional performance in automotive and industrial settings. Trust Texas Instruments to provide top-quality components that bring value and efficiency to your projects. Elevate your designs with the TLV2373IDRG4 and experience superior results today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier, ensuring a longer lifespan.

Maximum Input Offset Voltage: 6000 uV

Low input offset voltage minimizes errors in the output signal, making this operational amplifier suitable for precision applications.

Surface Mount: YES

Allows for easy integration onto circuit boards, making the overall design more compact and efficient.

Nominal Common Mode Reject Ratio: 72 dB

High common mode rejection ratio helps in minimizing noise and interference from the input signal, resulting in a cleaner output.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage, making it suitable for a wide range of applications.

Frequency Compensation: YES

Frequency compensation allows for stability in the amplifier's performance over a range of frequencies, ensuring reliable operation.

Minimum Slew Rate: 1 V/us

Fast slew rate enables the operational amplifier to respond quickly to changes in the input signal, ideal for applications requiring rapid signal processing.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2373IDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±8/2.7/16 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

3 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

72 dB

Minimum Common Mode Rejection Ratio (CMRR ):

55 dB

Input Offset Voltage Limit:

6000 uV

Minimum Voltage Gain:

79432

Minimum Slew Rate:

1 V/us

Nominal Slew Rate:

2.4 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

60 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

16.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

1.32 mA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TLV2373IDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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