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TLV2373IDGSRG4

Texas Instruments

TLV2373IDGSRG4 by Texas Instruments

TLV2373IDGSRG4 by Texas Instruments is a dual operational amplifier with 6000uV max input offset voltage, 1.32mA max supply current, and 3000kHz nominal unity gain bandwidth. Ideal for automotive applications due to its low-bias CMOS technology and wideband architecture.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 32,400 parts In-Stock

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Vyrian

USA . 6,558 parts In-Stock

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Digiode

USA . 4,741 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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One Stop Electronics

USA . 764 parts In-Stock

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$3.410

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764

$3.410

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Parana Technologies

USA . 953 parts In-Stock

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$4.152

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$4.597

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Ampacity Inc.

Singapore . 1,000 parts In-Stock

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$4.410

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$4.410

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DigiPath Technology Company

USA . 1,590 parts In-Stock

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$4.572

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$4.206

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ChromeModa Solutions

Germany . 3,076 parts In-Stock

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$4.665

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$3.825

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IDEA Electronic Components Group

UK . 242 parts In-Stock

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$4.665

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$4.198

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AZTECH Wire

Italy . 425 parts In-Stock

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$6.690

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Kepictronics

USA . 25,000 parts In-Stock

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Microchip USA

USA . 2,138 parts In-Stock

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Corphita

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Aranea Global

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Overview

Discover the unparalleled precision and reliability of the TLV2373IDGSRG4 by Texas Instruments, a leading name in operational amplifiers. Perfect for automotive applications, this compact and versatile op amp offers exceptional performance with a wideband technology, low-bias design, and high common mode rejection ratio. With a nominal unity gain bandwidth of 3000 kHz and minimum slew rate of 1 V/us, this amplifier ensures optimal signal processing in any scenario. Trust Texas Instruments to deliver cutting-edge solutions that exceed expectations. Elevate your designs with the TLV2373IDGSRG4 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 6000 uV

Low input offset voltage ensures accurate and precise signal processing.

No. of Functions: 2

Dual functions allow for versatile applications and signal processing capabilities.

Nominal Supply Voltage / Vsup (V): 5

Operates efficiently with a nominal supply voltage of 5V, suitable for various electronic circuits.

Maximum Operating Temperature: 125 °C

Can withstand high operating temperatures, making it suitable for automotive and industrial applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2373IDGSRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±8/2.7/16 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

3 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

72 dB

Minimum Common Mode Rejection Ratio (CMRR ):

55 dB

Input Offset Voltage Limit:

6000 uV

Minimum Voltage Gain:

79432

Minimum Slew Rate:

1 V/us

Nominal Slew Rate:

2.4 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

60 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

16.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

1.32 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

10

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold/Silver

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G10

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP10,.19,20

Trade Compliance

TLV2373IDGSRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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