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TLV2334IDG4

Texas Instruments

TLV2334IDG4 by Texas Instruments

TLV2334IDG4 by Texas Instruments is a CMOS Operational Amplifier with 14 terminals, Vsup of 5V, and low bias current of 0.002uA. Ideal for industrial applications requiring micropower consumption and high voltage gain up to 15000. Suitable for surface mount designs due to small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,129 parts In-Stock

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3,129

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Digiode

USA . 2,755 parts In-Stock

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2,755

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Distributors (Availability)

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Parana Technologies

USA . 1,015 parts In-Stock

1+ parts

$5.325

100+ parts

$494.495

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$4.792

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1,015

$5.325

$494.495

$4.792

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DigiPath Technology Company

USA . 1,430 parts In-Stock

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$5.863

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$5.394

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1,430

$5.863

$5.394

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ChromeModa Solutions

Germany . 2,521 parts In-Stock

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$5.983

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$4.906

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2,521

$5.983

$4.906

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IDEA Electronic Components Group

UK . 114 parts In-Stock

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$5.983

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$5.385

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114

$5.983

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$5.385

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One Stop Electronics

USA . 844 parts In-Stock

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$8.410

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844

$8.410

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AZTECH Wire

Italy . 272 parts In-Stock

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$8.725

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$8.725

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Component Stockers USA

USA . 704 parts In-Stock

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$99.990

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$99.990

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Corphita

USA . 384 parts In-Stock

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384

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Microchip USA

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Overview

Unleash the power of precision with the TLV2334IDG4 by Texas Instruments, a top-tier manufacturer known for delivering cutting-edge operational amplifiers. Designed for a multitude of applications, this op amp offers unparalleled quality and performance. With micropower technology, low bias, and a wide temperature range, this amplifier ensures optimal functionality in any industrial setting. Experience the benefits of high voltage gain, frequency compensation, and minimal bias current, all packaged in a compact, surface-mount design. Elevate your projects with the TLV2334IDG4 and watch your innovations thrive.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 12000 uV

This low input offset voltage ensures accurate and precise signal processing in various applications.

No. of Functions: 4

Having multiple functions in one package offers versatility and convenience in circuit design.

Nominal Common Mode Reject Ratio: 60 dB

A high common mode rejection ratio helps in minimizing noise and interference for cleaner output signals.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes this operational amplifier suitable for low power applications.

Frequency Compensation: YES

Frequency compensation ensures stability and prevents oscillations in the amplifier circuit, leading to reliable performance.

Technology: CMOS

CMOS technology allows for low power consumption and high input impedance, making the operational amplifier suitable for battery-powered devices.

Maximum Supply Current: 1.6 mA

With a low supply current requirement, this operational amplifier helps in conserving energy and prolonging battery life.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture provides stability and ease of use in various feedback configurations, enhancing the versatility of the operational amplifier.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2334IDG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

2/8 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

525 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

60 dB

Input Offset Voltage Limit:

12000 uV

Minimum Voltage Gain:

15000

Nominal Slew Rate:

0.4 V/us

Peak Bias Current:

2 nA

Maximum Bias Current (IIB) @25 °C:

2 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

8 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Maximum Supply Current:

1.6 mA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TLV2334IDG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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