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TLV2332IDRG4

Texas Instruments

TLV2332IDRG4 by Texas Instruments

TLV2332IDRG4 by Texas Instruments is a CMOS Operational Amplifier with 2 functions, Vsup of 3V, and low-bias micropower design. It offers high voltage gain of 25k, common mode rejection ratio of 92dB, and operates in industrial temperature range. Ideal for precision applications requiring low bias current and wide supply voltage range.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,259 parts In-Stock

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4,259

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Vyrian

USA . 3,259 parts In-Stock

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3,259

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Chip Stock

USA . 3,160 parts In-Stock

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3,160

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 142 parts In-Stock

1+ parts

$6.342

100+ parts

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1k+ parts

$7.094

10k+ parts

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142

$6.342

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$7.094

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ChromeModa Solutions

Germany . 5,372 parts In-Stock

1+ parts

$7.126

100+ parts

$5.843

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5,372

$7.126

$5.843

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IDEA Electronic Components Group

UK . 770 parts In-Stock

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$7.126

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$6.413

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770

$7.126

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$6.413

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One Stop Electronics

USA . 1,009 parts In-Stock

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$9.410

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1,009

$9.410

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AZTECH Wire

Italy . 340 parts In-Stock

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$12.237

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340

$12.237

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Microchip USA

USA . 1,075 parts In-Stock

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Corphita

USA . 231 parts In-Stock

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DigiPath Technology Company

USA . 78 parts In-Stock

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$6.425

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78

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$6.425

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Overview

Experience unparalleled performance and reliability with the TLV2332IDRG4 operational amplifiers from Texas Instruments. Boasting exceptional quality and precision, these op amps are designed to meet the demanding requirements of various applications. With low bias current and micropower capabilities, this product offers customers superior performance and efficiency. Whether you're in the industrial sector or working on a specialized project, the TLV2332IDRG4 provides unmatched value, making it the ideal choice for your amplification needs. Trust Texas Instruments for excellence in innovation and technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the internal components of the operational amplifier, making it suitable for various applications.

Maximum Input Offset Voltage: 11000 uV

Low input offset voltage ensures high precision and accuracy in signal processing, making this operational amplifier ideal for sensitive applications.

Maximum Average Bias Current (IIB): 0.002 uA

Low bias current minimizes power consumption and improves overall performance of the operational amplifier, making it efficient for battery-powered devices.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and simplifying the manufacturing process.

Nominal Common Mode Reject Ratio: 92 dB

High common mode rejection ratio ensures minimal interference from common-mode signals, resulting in cleaner output signals and improved signal integrity.

Nominal Supply Voltage / Vsup (V): 3

Operating at a low supply voltage of 3V makes this operational amplifier suitable for low-power applications and extends battery life.

Frequency Compensation: YES

Frequency compensation enhances stability and prevents oscillations, ensuring reliable operation of the operational amplifier in various conditions.

Technology: CMOS

CMOS technology offers low power consumption, high input impedance, and rail-to-rail output capability, making this operational amplifier versatile and efficient in different applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, this product is versatile and widely used in a variety of analog and signal processing applications for its high gain and accuracy.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2332IDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

300 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

92 dB

Minimum Common Mode Rejection Ratio (CMRR ):

65 dB

Input Offset Voltage Limit:

11000 uV

Minimum Voltage Gain:

25000

Nominal Slew Rate:

0.38 V/us

Peak Bias Current:

2 nA

Maximum Bias Current (IIB) @25 °C:

200 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

8 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

560 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.905 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLV2332IDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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