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TLV2302IDGKG4

Texas Instruments

TLV2302IDGKG4 by Texas Instruments

TLV2302IDGKG4 by Texas Instruments is a dual operational amplifier with 5000uV max input offset voltage and 73dB nominal CMRR. Ideal for automotive applications, it operates at -40 to 125 °C with micropower consumption of 0.0034mA. Its BICMOS technology ensures low bias current of 0.00025uA for precision performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,598 parts In-Stock

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Digiode

USA . 1,462 parts In-Stock

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One Stop Electronics

USA . 491 parts In-Stock

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$0.410

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491

$0.410

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Parana Technologies

USA . 2,079 parts In-Stock

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$1.574

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$2.213

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DigiPath Technology Company

USA . 1,862 parts In-Stock

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$1.734

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IDEA Electronic Components Group

UK . 432 parts In-Stock

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$1.769

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$1.592

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432

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ChromeModa Solutions

Germany . 265 parts In-Stock

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$1.769

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$1.451

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AZTECH Wire

Italy . 869 parts In-Stock

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$14.294

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Microchip USA

USA . 12,424 parts In-Stock

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Corphita

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Perfect Parts

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Overview

Discover the power and precision of the TLV2302IDGKG4 operational amplifiers by Texas Instruments. Crafted with unparalleled quality and cutting-edge technology, these op amps are designed to deliver exceptional performance in a wide range of applications. From automotive to industrial settings, these versatile components offer low-bias operation, micropower capabilities, and efficient frequency compensation. Experience the value of reliability and innovation with Texas Instruments' TLV2302IDGKG4, setting new standards in operational amplifier excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is cost-effective, lightweight, and durable, making the product suitable for a wide range of applications.

Maximum Input Offset Voltage: 5000 uV

Low input offset voltage ensures high accuracy and precision in signal amplification.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving space and reducing production costs.

Nominal Supply Voltage / Vsup (V): 2.7

Low supply voltage requirement makes the product suitable for low-power applications while maintaining performance.

Frequency Compensation: YES

Frequency compensation improves stability and bandwidth of the amplifier, ensuring consistent performance across different operating conditions.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, ensuring reliability and performance under harsh environmental conditions.

Technology: BICMOS

Utilizing BiCMOS technology provides a balance between high-speed performance and low-power consumption, making it versatile for various applications.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, it offers high gain, bandwidth, and versatility in signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2302IDGKG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BICMOS

Power Supply:

±1.25/±8/2.5/16 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

5.5 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

73 dB

Minimum Common Mode Rejection Ratio (CMRR ):

55 dB

Input Offset Voltage Limit:

5000 uV

Minimum Voltage Gain:

30000

Nominal Slew Rate:

2500 V/us

Maximum Input Offset Current (IIO):

250 pA

Peak Bias Current:

1 nA

Maximum Bias Current (IIB) @25 °C:

250 pA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

17 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

3.4 μA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Output Type:

Open-Collector

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

TLV2302IDGKG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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