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TLV2264AMWB

Texas Instruments

TLV2264AMWB by Texas Instruments

TLV2264AMWB by Texas Instruments is a CMOS Operational Amplifier with 4 functions, offering low bias current of 0.00006 uA and micropower feature. Ideal for military applications due to MIL-STD-883 screening level, it has a unity gain bandwidth of 710 kHz and operates in temperatures ranging from -55 to 125 °C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 7,996 parts In-Stock

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Digiode

USA . 1,801 parts In-Stock

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One Stop Electronics

USA . 175 parts In-Stock

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$1.410

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$1.410

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Parana Technologies

USA . 1,103 parts In-Stock

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$4.038

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$4.500

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$4.038

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DigiPath Technology Company

USA . 1,077 parts In-Stock

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$4.446

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$4.446

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ChromeModa Solutions

Germany . 5,751 parts In-Stock

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$4.537

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$3.720

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$4.537

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IDEA Electronic Components Group

UK . 721 parts In-Stock

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$4.537

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$4.083

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721

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Advanced Electronics

New Zealand . 300 parts In-Stock

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$6.301

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$5.734

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$5.167

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$6.301

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AZTECH Wire

Italy . 712 parts In-Stock

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$12.866

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Corphita

USA . 4,098 parts In-Stock

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Microchip USA

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Overview

Discover the TLV2264AMWB by Texas Instruments, a top-notch operational amplifier designed for high-performance applications. With Texas Instruments' reputation for quality and reliability, this device offers customers unparalleled value with its micropower technology, low-bias operation, and wide temperature range. Ideal for military-grade projects, the TLV2264AMWB provides precise amplification and minimal power consumption. Trust Texas Instruments to deliver excellence in every aspect, making your designs stand out from the rest.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package provides durability and reliability, making this product suitable for harsh environments.

Maximum Input Offset Voltage: 950 uV

The low input offset voltage helps in reducing errors in the output signal, making this op amp highly accurate.

Surface Mount: YES

The option for surface mounting allows for easy integration into circuit boards, saving space and simplifying assembly.

Nominal Common Mode Reject Ratio: 83 dB

The high common mode reject ratio ensures that common mode noise is effectively rejected, leading to clean and accurate output signals.

Maximum Supply Voltage Limit: 16 V

With a high supply voltage limit, this op amp can withstand higher voltages, making it suitable for a wide range of applications.

Minimum Operating Temperature: -55 °C

The wide operating temperature range allows this op amp to function efficiently in extreme temperature conditions, enhancing its versatility.

Nominal Unity Gain Bandwidth: 710 kHz

The high unity gain bandwidth ensures efficient signal processing, making this op amp suitable for high-frequency applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, this product is versatile and can be used in various applications such as amplification, filtering, and signal conditioning.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2264AMWB attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±4/2.7/8 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

710 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

83 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

950 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

0.25 V/us

Nominal Slew Rate:

0.55 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

800 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

16 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

1 mA

Physical Characteristics

Length:

0.363 in (9.21 mm)

Width:

0.247 in (6.285 mm)

Maximum Seated Height:

0.08 in (2.03 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin/Lead

Package Body Material:

Ceramic, Glass-Sealed

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

MIL-STD-883

Standards

JESD-30 Code:

R-GDFP-F14

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tube

Package Code:

DFP

Package Shape:

Package Style:

Flatpack

Package Equivalence Code:

FL14,.25

Trade Compliance

TLV2264AMWB Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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