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TLV2262IPWRG4

Texas Instruments

TLV2262IPWRG4 by Texas Instruments

TLV2262IPWRG4 by Texas Instruments is a dual operational amplifier with low bias current (0.0008 uA) and micropower feature. It operates at a wide temperature range (-40 to 125 °C) making it suitable for automotive applications. With a nominal unity gain bandwidth of 670 kHz, it offers high performance in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 4,500 parts In-Stock

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Vyrian

USA . 2,243 parts In-Stock

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Digiode

USA . 1,611 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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One Stop Electronics

USA . 1,611 parts In-Stock

1+ parts

$4.410

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$4.410

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Parana Technologies

USA . 641 parts In-Stock

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$6.470

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$7.215

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$6.470

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DigiPath Technology Company

USA . 1,505 parts In-Stock

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$7.125

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ChromeModa Solutions

Germany . 3,171 parts In-Stock

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$7.270

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$5.961

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$7.270

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IDEA Electronic Components Group

UK . 1,757 parts In-Stock

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$7.270

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$6.543

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Ampacity Inc.

Singapore . 1,563 parts In-Stock

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$7.410

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AZTECH Wire

Italy . 758 parts In-Stock

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Kepictronics

USA . 8,210 parts In-Stock

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Corphita

USA . 4,976 parts In-Stock

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Continental Prestige Electronics

USA . 2,917 parts In-Stock

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Argo Parts USA

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Microchip USA

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Aranea Global

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Overview

Unlock unparalleled performance and precision with the TLV2262IPWRG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers cutting-edge operational amplifiers that are ideal for a wide range of applications. Experience superior quality, reliability, and efficiency with this amplifier, offering customers unmatched value and benefits. Whether you're in automotive, industrial, or consumer electronics, the TLV2262IPWRG4 is sure to exceed your expectations and elevate your projects to new heights. Trust Texas Instruments for top-of-the-line amplifiers that deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the operational amplifier, making it suitable for various applications.

Maximum Input Offset Voltage: 3000 uV

Low input offset voltage ensures accurate signal processing and minimal error in amplification.

Maximum Average Bias Current (IIB): 0.0008 uA

Low bias current helps in maintaining signal integrity and reducing power consumption.

Surface Mount: YES

Allows for easy and efficient PCB mounting, saving space and facilitating automated assembly processes.

Nominal Common Mode Reject Ratio: 75 dB

High common mode rejection ratio indicates the amplifier's ability to suppress unwanted common-mode signals, resulting in a clean output signal.

Nominal Supply Voltage / Vsup (V): 3

Operates at a low supply voltage, making it suitable for low-power applications or portable devices.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Minimum Voltage Gain: 30000

High voltage gain capability ensures efficient signal amplification and processing.

Technology: CMOS

CMOS technology offers low power consumption, high input impedance, and fast response times, making the operational amplifier energy-efficient and versatile.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, it is well-suited for a wide range of analog signal processing applications, including amplification, filtering, and signal conditioning.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2262IPWRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±4/2.7/8 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

670 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

75 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

30000

Minimum Slew Rate:

0.3 V/us

Nominal Slew Rate:

0.55 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

800 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

16 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

500 μA

Physical Characteristics

Length:

0.173 in (4.4 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.25

Trade Compliance

TLV2262IPWRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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