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TLV2262IDRG4

Texas Instruments

TLV2262IDRG4 by Texas Instruments

TLV2262IDRG4 by Texas Instruments is a CMOS Operational Amplifier with low-bias and micropower features. It has a max input offset voltage of 2500 uV, min slew rate of 0.3 V/us, and nominal unity gain bandwidth of 710 kHz. Ideal for automotive applications due to its small outline package style and wide temperature range.

Median Price

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Lifecycle Status

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Digiode

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Vyrian

USA . 3,688 parts In-Stock

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AZTECH Wire

Italy . 838 parts In-Stock

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$4.947

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Parana Technologies

USA . 788 parts In-Stock

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$5.159

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$5.758

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ChromeModa Solutions

Germany . 6,135 parts In-Stock

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$5.797

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$4.754

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IDEA Electronic Components Group

UK . 305 parts In-Stock

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One Stop Electronics

USA . 927 parts In-Stock

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Metaverse IC Inc.

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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DigiPath Technology Company

USA . 579 parts In-Stock

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Overview

Elevate your electronic designs with the TLV2262IDRG4 operational amplifier from Texas Instruments, a leader in innovative semiconductor solutions. This versatile component offers unmatched precision and reliability, making it ideal for a wide range of applications. With micropower capabilities and low-bias design, this amplifier delivers exceptional performance while conserving energy. Whether you're designing automotive systems or consumer electronics, the TLV2262IDRG4 provides the value and quality you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making it suitable for various applications.

Maximum Input Offset Voltage: 2500 uV

Low input offset voltage ensures high precision in signal processing.

Maximum Average Bias Current (IIB): 0.0008 uA

Low bias current minimizes power consumption and improves overall performance.

Surface Mount: YES

Allows for easy and efficient PCB assembly.

Nominal Common Mode Reject Ratio: 83 dB

Offers high rejection of common mode noise for accurate signal processing.

Nominal Supply Voltage / Vsup (V): 3

Operates at a standard supply voltage, making it compatible with many systems.

Minimum Slew Rate: 0.3 V/us

Fast slew rate enables quick response to input signals.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity.

Amplifier Type: OPERATIONAL AMPLIFIER

Specifically designed for amplifying signals accurately and efficiently.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2262IDRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±4/2.7/8 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

710 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

83 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

2500 uV

Minimum Voltage Gain:

55000

Minimum Slew Rate:

0.3 V/us

Nominal Slew Rate:

0.55 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

800 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

16 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

500 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLV2262IDRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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