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TLV2254QDR

Texas Instruments

TLV2254QDR by Texas Instruments

TLV2254QDR by Texas Instruments is a CMOS Operational Amplifier with 4 functions, offering low-bias and micropower features. It has a max input offset voltage of 1750 uV, operates at temperatures ranging from -40 to 125 °C, and has a nominal unity gain bandwidth of 187 kHz. Ideal for automotive applications due to its small outline package style and surface mount capability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,191 parts In-Stock

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Digiode

USA . 2,630 parts In-Stock

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2,630

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Distributors (Availability)

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Parana Technologies

USA . 994 parts In-Stock

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$2.228

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$2.731

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994

$2.228

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$2.731

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DigiPath Technology Company

USA . 654 parts In-Stock

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$2.453

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$2.257

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654

$2.453

$2.257

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ChromeModa Solutions

Germany . 4,967 parts In-Stock

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$2.503

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$2.052

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$2.503

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IDEA Electronic Components Group

UK . 622 parts In-Stock

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$2.503

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$2.253

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622

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One Stop Electronics

USA . 960 parts In-Stock

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$7.410

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960

$7.410

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AZTECH Wire

Italy . 875 parts In-Stock

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$15.505

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Corphita

USA . 2,873 parts In-Stock

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Microchip USA

USA . 368 parts In-Stock

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Overview

Experience superior performance and reliability with the TLV2254QDR operational amplifiers by Texas Instruments. Designed with precision and quality in mind, these op amps offer unparalleled functionality for a wide range of applications. With a compact design and low power consumption, customers can enjoy maximum efficiency and cost-effectiveness. Trust in Texas Instruments to deliver cutting-edge technology that meets your needs seamlessly. Elevate your projects with the TLV2254QDR and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 1750 uV

Low input offset voltage ensures accurate and precise operations.

Surface Mount: YES

Allows for easy and efficient installation on printed circuit boards.

Nominal Common Mode Reject Ratio: 75 dB

High common mode rejection ratio helps in reducing noise and interference in the input signal.

Nominal Supply Voltage / Vsup (V): 3

Operates efficiently at a nominal supply voltage of 3V.

Minimum Voltage Gain: 10000

High voltage gain ensures amplification of input signals with minimal distortion.

Frequency Compensation: YES

Ensures stability and accurate performance over a range of frequencies.

Technology: CMOS

CMOS technology provides low power consumption and high efficiency.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2254QDR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±8/2.7/16 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

187 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

75 dB

Input Offset Voltage Limit:

1750 uV

Minimum Voltage Gain:

10000

Minimum Slew Rate:

0.05 V/us

Nominal Slew Rate:

0.1 V/us

Peak Bias Current:

1 nA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

16 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

300 μA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TLV2254QDR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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