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TLV2254AQDRG4Q1

Texas Instruments

TLV2254AQDRG4Q1 by Texas Instruments

TLV2254AQDRG4Q1 by Texas Instruments is a CMOS Operational Amplifier with 4 functions, 83 dB CMRR, and 200 kHz unity gain bandwidth. Ideal for automotive applications due to AEC-Q100 screening level and low bias current of 0.00006 uA. Package style is small outline with dimensions of 8.65mm x 3.9mm x 1.75mm.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,297 parts In-Stock

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Digiode

USA . 1,005 parts In-Stock

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One Stop Electronics

USA . 316 parts In-Stock

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$0.410

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$0.410

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Parana Technologies

USA . 1,393 parts In-Stock

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$5.449

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$6.164

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DigiPath Technology Company

USA . 1,935 parts In-Stock

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$6.001

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$6.001

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ChromeModa Solutions

Germany . 1,929 parts In-Stock

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$6.123

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$5.021

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IDEA Electronic Components Group

UK . 1,707 parts In-Stock

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$6.123

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$5.511

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AZTECH Wire

Italy . 335 parts In-Stock

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$7.550

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Component Stockers USA

USA . 1,542 parts In-Stock

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$37.880

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Microchip USA

USA . 1,672 parts In-Stock

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Corphita

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Overview

Enhance your automotive applications with the TLV2254AQDRG4Q1 operational amplifier by Texas Instruments. This high-quality component offers low bias, micropower technology, and AEC-Q100 screening for reliable performance in demanding environments. With its small outline package and wide supply voltage range, this op amp is ideal for a variety of automotive systems, providing customers with exceptional value and precision amplification for their designs. Experience the benefits of Texas Instruments' expertise and innovation with the TLV2254AQDRG4Q1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for various applications.

Maximum Input Offset Voltage: 850 uV

Low input offset voltage ensures precision in signal processing.

Surface Mount: YES

Easier and more efficient installation on circuit boards.

Nominal Common Mode Reject Ratio: 83 dB

High common mode rejection ratio minimizes external interference.

Nominal Supply Voltage / Vsup (V): 3

Operates at a low supply voltage, suitable for low power applications.

Minimum Slew Rate: 0.05 V/us

Fast slew rate allows for quick response to input signals.

Technology: CMOS

CMOS technology offers low power consumption and high switching speeds.

Temperature Grade: AUTOMOTIVE

Suitable for automotive applications, meeting stringent industry standards.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2254AQDRG4Q1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±8/2.7/16 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

200 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

83 dB

Minimum Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

850 uV

Minimum Voltage Gain:

10000

Minimum Slew Rate:

0.05 V/us

Nominal Slew Rate:

0.12 V/us

Maximum Input Offset Current (IIO):

60 pA

Peak Bias Current:

60 pA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

16 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

250 μA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TLV2254AQDRG4Q1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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