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TLV2252QD

Texas Instruments

TLV2252QD by Texas Instruments

TLV2252QD by Texas Instruments is a dual operational amplifier with low bias current (0.001 uA) and micropower feature. It has a max input offset voltage of 1750 uV, making it suitable for automotive applications due to its small outline package style and wide temperature range (-40 to 125 °C).

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,654 parts In-Stock

1+ parts

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5,654

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Digiode

USA . 2,276 parts In-Stock

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2,276

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,251 parts In-Stock

1+ parts

$1.915

100+ parts

-

1k+ parts

$2.452

10k+ parts

-

1,251

$1.915

-

$2.452

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ChromeModa Solutions

Germany . 3,909 parts In-Stock

1+ parts

$2.152

100+ parts

$1.765

1k+ parts

-

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3,909

$2.152

$1.765

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IDEA Electronic Components Group

UK . 378 parts In-Stock

1+ parts

$2.152

100+ parts

-

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$1.937

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378

$2.152

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$1.937

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One Stop Electronics

USA . 1,421 parts In-Stock

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$4.410

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1,421

$4.410

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AZTECH Wire

Italy . 689 parts In-Stock

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$6.899

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689

$6.899

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Corphita

USA . 605 parts In-Stock

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605

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Microchip USA

USA . 239 parts In-Stock

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239

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DigiPath Technology Company

USA . 145 parts In-Stock

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$1.940

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145

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$1.940

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Overview

Unleash the power of precision and performance with the TLV2252QD operational amplifier by Texas Instruments. Crafted with expertise and innovation, this amplifier offers exceptional reliability and quality for a variety of applications. From automotive to industrial, this versatile component delivers outstanding results with minimal bias current and low power consumption. Elevate your designs with the TLV2252QD and experience unparalleled value, efficiency, and superior performance that only Texas Instruments can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the operational amplifier.

Maximum Input Offset Voltage: 1750 uV

Low input offset voltage ensures precision in signal processing applications.

Maximum Average Bias Current (IIB): 0.001 uA

Low bias current helps in minimizing power consumption and maintaining signal integrity.

Surface Mount: YES

Allows for easy and convenient placement on PCBs, saving space and reducing assembly time.

Nominal Common Mode Reject Ratio: 75 dB

High common mode rejection ratio helps in rejecting common mode noise for improved signal quality.

Nominal Supply Voltage / Vsup (V): 3

Operates efficiently at a nominal supply voltage of 3V for low power applications.

Minimum Slew Rate: 0.05 V/us

Provides fast response time for signal amplification and processing.

Maximum Operating Temperature: 125 °C

Suitable for applications in harsh environments with high temperature requirements.

Frequency Compensation: YES

Ensures stability and prevents oscillations in the operational amplifier circuit.

Minimum Voltage Gain: 10000

High voltage gain allows for amplification of weak signals with minimal distortion.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2252QD attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±4/2.7/8 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

187 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

75 dB

Input Offset Voltage Limit:

1750 uV

Minimum Voltage Gain:

10000

Minimum Slew Rate:

0.05 V/us

Nominal Slew Rate:

0.1 V/us

Peak Bias Current:

1 nA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

16 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

150 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLV2252QD Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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