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TLV2252AQDR

Texas Instruments

TLV2252AQDR by Texas Instruments

TLV2252AQDR by Texas Instruments is a dual operational amplifier with low bias current (0.001 uA) and high common mode rejection ratio (77 dB). Ideal for automotive applications, it operates at temperatures ranging from -40 to 125 °C and has a unity gain bandwidth of 187 kHz.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,965 parts In-Stock

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Digiode

USA . 3,014 parts In-Stock

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3,014

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Sensible Micro Corp

USA . 958 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 485 parts In-Stock

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$2.822

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$3.310

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485

$2.822

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ChromeModa Solutions

Germany . 1,656 parts In-Stock

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$3.171

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$2.600

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IDEA Electronic Components Group

UK . 196 parts In-Stock

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$3.171

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$2.854

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One Stop Electronics

USA . 1,643 parts In-Stock

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$5.410

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AZTECH Wire

Italy . 390 parts In-Stock

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$19.265

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Corphita

USA . 3,749 parts In-Stock

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DigiPath Technology Company

USA . 2,157 parts In-Stock

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$2.859

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$2.859

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Microchip USA

USA . 337 parts In-Stock

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Overview

The Texas Instruments TLV2252AQDR is a high-quality operational amplifier that offers exceptional performance and reliability. Designed with precision in mind, this product is perfect for a wide range of applications in various industries. With its advanced technology and low-power consumption, customers can trust that they are getting a top-of-the-line product that will deliver superior results. Experience the value and benefits that the TLV2252AQDR has to offer, and discover how it can enhance your projects with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy packaging provides good insulation and protection for the internal components of the op amp, ensuring reliable performance.

Maximum Input Offset Voltage: 1000 uV

Low input offset voltage results in higher accuracy and precision in the output signal of the op amp.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and cost in manufacturing processes.

Minimum Slew Rate: 0.05 V/us

Low slew rate ensures smooth and precise signal amplification without distortion or overshoot.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allows for use in various environments and applications, enhancing versatility.

Nominal Unity Gain Bandwidth: 187 kHz

High unity gain bandwidth ensures stable and accurate performance across different signal frequencies.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the op amp suitable for battery-powered devices and noise-sensitive applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, this product is designed for high gain, high input impedance, and low output impedance, making it ideal for various signal processing applications.

Technical Specifications

Operational Amplifiers (Op Amps) TLV2252AQDR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

±1.35/±4/2.7/8 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

187 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

77 dB

Input Offset Voltage Limit:

1000 uV

Minimum Voltage Gain:

10000

Minimum Slew Rate:

0.05 V/us

Nominal Slew Rate:

0.1 V/us

Peak Bias Current:

1 nA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

16 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

150 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLV2252AQDR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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