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TLE2062MDG4

Texas Instruments

TLE2062MDG4 by Texas Instruments

TLE2062MDG4 by Texas Instruments is a dual operational amplifier with low bias current (0.03 uA) and micropower feature. It operates at wide temperature range (-55 to 125 °C) making it suitable for military applications. With high common mode rejection ratio (90 dB), it's ideal for precision signal conditioning in harsh environments.

Median Price

$2.457

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 700 parts In-Stock

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$2.457

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$2.457

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Vyrian

USA . 7,888 parts In-Stock

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Digiode

USA . 1,713 parts In-Stock

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1,713

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Euro-Tech

UK . 100 parts In-Stock

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100

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One Stop Electronics

USA . 1,098 parts In-Stock

1+ parts

$2.410

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1,098

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Netroflash

USA . 100 parts In-Stock

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$2.457

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$2.408

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100

$2.457

$2.408

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Ampacity Inc.

Singapore . 754 parts In-Stock

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$3.410

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754

$3.410

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Parana Technologies

USA . 1,562 parts In-Stock

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$6.146

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$6.917

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1,562

$6.146

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$6.917

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DigiPath Technology Company

USA . 1,902 parts In-Stock

1+ parts

$6.768

100+ parts

$6.226

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$6.768

$6.226

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ChromeModa Solutions

Germany . 274 parts In-Stock

1+ parts

$6.906

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$5.663

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274

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IDEA Electronic Components Group

UK . 167 parts In-Stock

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$6.906

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$6.215

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AZTECH Wire

Italy . 877 parts In-Stock

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$12.202

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Corphita

USA . 4,733 parts In-Stock

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Microchip USA

USA . 2,378 parts In-Stock

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Overview

Elevate your electronic designs with the TLE2062MDG4 by Texas Instruments, a top-tier manufacturer known for quality and reliability. As a high-performance Operational Amplifier, this product offers precision and efficiency in various applications. With low bias current and micropower capabilities, it delivers exceptional value to customers seeking optimal performance. Trust in Texas Instruments to provide cutting-edge technology that exceeds expectations and elevates your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the operational amplifier, making it suitable for a wide range of applications.

Maximum Input Offset Voltage: 7000 uV

Low input offset voltage ensures accurate and stable performance of the amplifier in signal processing applications.

Nominal Common Mode Reject Ratio: 90 dB

High common mode rejection ratio allows the amplifier to effectively reject common mode noise and interference, resulting in cleaner output signals.

Technology: BIFET

The BIFET technology combines the benefits of bipolar and CMOS technologies, providing high input impedance and low input currents for improved performance.

Nominal Unity Gain Bandwidth: 1300 kHz

High unity gain bandwidth ensures that the amplifier can handle a wide range of frequencies effectively, making it versatile for various applications.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, this amplifier can operate reliably in demanding environments without overheating.

Low-Bias: YES

Low bias current ensures minimal power consumption and stable operation of the amplifier, making it energy-efficient and suitable for battery-powered devices.

Surface Mount: YES

Surface mount packaging makes it easy to integrate the amplifier onto circuit boards, saving space and reducing assembly costs.

Technical Specifications

Operational Amplifiers (Op Amps) TLE2062MDG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIFET

Power Supply:

±3.5/±18/7/36 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.3 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

90 dB

Minimum Common Mode Rejection Ratio (CMRR ):

72 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

500

Minimum Slew Rate:

1.8 V/us

Nominal Slew Rate:

3.4 V/us

Maximum Input Offset Current (IIO):

15 nA

Peak Bias Current:

30 nA

Maximum Bias Current (IIB) @25 °C:

60 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

19 V

Maximum Negative Supply Voltage:

-5 V

Minimum Negative Supply Voltage:

-19 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

690 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TLE2062MDG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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