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TLC556LDR

Texas Instruments

TLC556LDR by Texas Instruments

TLC556LDR by Texas Instruments is a dual-function analog waveform generator with 14 terminals. It operates at a supply voltage range of 2V to 15V and has a max output frequency of 1.2 GHz. Ideal for industrial applications requiring CMOS technology in a small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,612 parts In-Stock

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Digiode

USA . 1,893 parts In-Stock

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1,893

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Distributors (Availability)

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Semicontronic

India . 948 parts In-Stock

1+ parts

$0.500

100+ parts

$0.488

1k+ parts

$0.485

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948

$0.500

$0.488

$0.485

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One Stop Electronics

USA . 1,202 parts In-Stock

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$2.500

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$2.500

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Ampacity Inc.

Singapore . 430 parts In-Stock

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$4.500

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430

$4.500

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AZTECH Wire

Italy . 417 parts In-Stock

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$7.606

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417

$7.606

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Parana Technologies

USA . 1,258 parts In-Stock

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$8.484

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$9.136

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1,258

$8.484

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$9.136

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DigiPath Technology Company

USA . 2,051 parts In-Stock

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$9.342

100+ parts

$8.595

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2,051

$9.342

$8.595

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ChromeModa Solutions

Germany . 5,193 parts In-Stock

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$9.533

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$7.817

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$9.533

$7.817

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IDEA Electronic Components Group

UK . 1,384 parts In-Stock

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$9.533

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$9.056

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$8.580

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1,384

$9.533

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$8.580

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Corphita

USA . 699 parts In-Stock

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699

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Corohmni

South Africa . 470 parts In-Stock

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Overview

Elevate your analog waveform generation with the Texas Instruments TLC556LDR. Crafted with precision and quality in mind, this innovative product offers customers unparalleled performance and reliability. Perfect for a wide range of applications, this dual-function device provides seamless functionality and exceptional value. Say goodbye to limitations and hello to endless possibilities with the TLC556LDR by Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is durable and provides protection to the internal components of the product.

Surface Mount: YES

Surface mount technology allows for easy integration into electronic circuits, saving space and reducing assembly time.

No. of Functions: 2

Having multiple functions in a single device increases versatility and functionality.

Nominal Supply Voltage (Vsup): 3 V

Operating at a low voltage of 3V makes this product energy efficient.

Maximum Output Frequency: 1.2 GHz

High output frequency of 1.2 GHz allows for generating high frequency waveforms.

No. of Terminals: 14

Having 14 terminals provides flexibility for connecting to other components in a circuit.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this product is suitable for industrial applications where higher temperatures are common.

Minimum Operating Temperature: -40 °C

The ability to operate at low temperatures down to -40°C ensures reliable performance in various environmental conditions.

Width (mm): 3.9 mm

Compact width of 3.9mm enables easy placement in tight spaces on a circuit board.

Minimum Supply Voltage (Vsup): 2 V

With a minimum supply voltage of 2V, this product can operate efficiently even at lower voltages.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature rating ensures reliable operation in harsh environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product efficient and reliable.

Technical Specifications

Analog Waveform Generation TLC556LDR attributes and parameters. Explore more Analog Waveform Generation devices from Texas Instruments

Specs

Additional Features:

IT CAN ALSO OPERATE AT 5V OR 15V NOMINALS

Other IC type:

JESD-30 Code:

R-PDSO-G14

Length:

8.65 mm

No. of Functions:

2

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Frequency:

1.2 GHz

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

15 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width (mm):

3.9 mm

Trade Compliance

TLC556LDR Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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