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TL321MFK/883B

Texas Instruments

TL321MFK/883B by Texas Instruments

TL321MFK/883B by Texas Instruments is a MIL-STD-883 Class B operational amplifier with 20 terminals, operating b/w -55 to 125°C. It features voltage-feedback architecture, frequency compensation, and operates on power supplies of 5/30V. Ideal for military applications requiring high-performance amplification in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,142 parts In-Stock

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3,142

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Digiode

USA . 3,056 parts In-Stock

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3,056

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 391 parts In-Stock

1+ parts

$1.410

100+ parts

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391

$1.410

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Parana Technologies

USA . 2,150 parts In-Stock

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$6.416

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$7.162

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2,150

$6.416

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$7.162

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DigiPath Technology Company

USA . 1,259 parts In-Stock

1+ parts

$7.065

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1,259

$7.065

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ChromeModa Solutions

Germany . 2,023 parts In-Stock

1+ parts

$7.209

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$5.911

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2,023

$7.209

$5.911

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IDEA Electronic Components Group

UK . 1,813 parts In-Stock

1+ parts

$7.209

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$6.488

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1,813

$7.209

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$6.488

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AZTECH Wire

Italy . 235 parts In-Stock

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$7.584

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235

$7.584

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Corphita

USA . 1,690 parts In-Stock

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1,690

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Overview

Experience outstanding performance and reliability with the TL321MFK/883B by Texas Instruments. As a leading manufacturer of operational amplifiers, Texas Instruments delivers cutting-edge technology and unparalleled quality in every product. Ideal for military-grade applications, this op amp offers superior functionality and precision in a compact chip carrier package. With a wide range of power supplies and operating temperatures, customers can trust in the TL321MFK/883B to deliver consistent performance in any environment. Upgrade your projects with the value and benefits that only Texas Instruments can provide.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package material provides excellent thermal properties, making the operational amplifier suitable for a wide range of operating temperatures.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and space in electronic circuit design.

Screening Level: MIL-STD-883 Class B (Modified)

The modified Class B screening ensures high reliability and quality of the operational amplifier for demanding applications.

Package Shape: SQUARE

Square package shape allows for easy placement and alignment on the PCB, enhancing the overall design aesthetics and functionality.

Power Supplies (V): 5/30

Wide range of power supply voltages (5V to 30V) offers flexibility in operational amplifier usage across various electronic systems.

No. of Terminals: 20

Higher number of terminals provides additional connectivity options and functionality for the operational amplifier in complex circuits.

Package Style (Meter): CHIP CARRIER

Chip carrier package style allows for compact integration of the operational amplifier within electronic devices, saving space and improving portability.

Maximum Operating Temperature: 125 °C

High maximum operating temperature of 125°C ensures reliable performance in harsh environmental conditions.

Frequency Compensation: YES

Frequency compensation feature ensures stability and accuracy of the operational amplifier's output signal over a wide range of frequencies.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature of -55°C enables the operational amplifier to function effectively in extreme cold environments.

Terminal Position: QUAD

Quad terminal position facilitates easy connectivity and circuit integration of the operational amplifier for efficient signal processing.

Temperature Grade: MILITARY

Military-grade temperature rating ensures ruggedness and durability of the operational amplifier for use in harsh military applications.

Technology: BIPOLAR

Bipolar technology provides high precision and linearity in signal amplification, making the operational amplifier ideal for accurate signal processing.

Terminal Form: NO LEAD

No lead terminal form improves solder joint reliability and overall lifespan of the operational amplifier in electronic systems.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifier design offers high gain and differential input for precise signal amplification and processing in various applications.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture ensures stable amplification of voltage signals with high bandwidth performance, suitable for a wide range of applications.

Terminal Pitch: 1.27 mm

Narrow terminal pitch of 1.27mm enables compact PCB layout and tight circuit integration of the operational amplifier for optimized space utilization.

Technical Specifications

Operational Amplifiers (Op Amps) TL321MFK/883B attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5/30 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Operational Characteristics

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Total Terminals:

20

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Quad

Terminal Form:

Package Body Material:

Ceramic

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

MIL-STD-883 Class B (Modified)

Standards

JESD-30 Code:

S-XQCC-N20

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Chip Carrier

Package Equivalence Code:

LCC20,.35SQ

Trade Compliance

TL321MFK/883B Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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