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TIL919C

Texas Instruments

TIL919C by Texas Instruments

TIL919C by Texas Instruments is a 4-channel optocoupler with Darlington output. It has a max forward current of 0.05A and isolation voltage of 5300V, making it ideal for high-voltage applications. With a temp range of -55 to 100°C, it ensures reliable performance in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,642 parts In-Stock

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Digiode

USA . 4,839 parts In-Stock

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Semicontronic

India . 525 parts In-Stock

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$0.100

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$0.098

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$0.097

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525

$0.100

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Parana Technologies

USA . 1,234 parts In-Stock

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$0.470

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$1.615

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DigiPath Technology Company

USA . 1,945 parts In-Stock

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$0.517

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$0.476

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ChromeModa Solutions

Germany . 1,834 parts In-Stock

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$0.528

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$0.433

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IDEA Electronic Components Group

UK . 442 parts In-Stock

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$0.528

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$0.475

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One Stop Electronics

USA . 728 parts In-Stock

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$6.100

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AZTECH Wire

Italy . 458 parts In-Stock

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Ampacity Inc.

Singapore . 1,642 parts In-Stock

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$7.100

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Corphita

USA . 1,234 parts In-Stock

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Corohmni

South Africa . 298 parts In-Stock

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Overview

Experience the superior quality and reliability of Texas Instruments with the TIL919C Optocoupler Transistor Outputs. This versatile component offers 4 separate channels of DARLINGTON OUTPUT OPTOCOUPLER technology, providing maximum isolation voltage of 5300 V for a wide range of applications. Trust in Texas Instruments' reputation for excellence and innovation to deliver exceptional performance and peace of mind. Boost your projects with the value and benefits of the TIL919C today.

Feature Benefit Bullets

Configuration: SEPARATE, 4 CHANNELS

The separate 4 channels configuration allows for independent control and isolation of each channel, providing flexibility in applications and ensuring reliable performance.

Maximum Forward Current: 0.05 A

The high maximum forward current capability of 0.05 A ensures that the optocoupler can handle demanding loads without overheating or performance degradation.

Optoelectronic Type: DARLINGTON OUTPUT OPTOCOUPLER

The Darlington output optocoupler offers high current transfer ratio and low saturation voltage, making it ideal for driving power transistors and other high-current applications.

Maximum Operating Temperature: 100 °C

With a maximum operating temperature of 100°C, this optocoupler can withstand elevated temperatures without compromising its performance, ensuring reliability in harsh environments.

Minimum Operating Temperature: -55 °C

The wide operating temperature range of -55 to 100°C enables this optocoupler to function efficiently in both extreme cold and hot conditions, making it versatile for various applications.

Maximum Dark Current: 100 nA

The low maximum dark current of 100 nA ensures minimal leakage current when the optocoupler is in the off state, leading to improved efficiency and accuracy in signal transmission.

No. of Elements: 4

Having 4 elements provides redundancy and backup in case one channel fails, enhancing the reliability and durability of the optocoupler in critical applications.

Minimum Collector-emitter Breakdown Voltage: 35 V

The minimum collector-emitter breakdown voltage of 35 V ensures protection against voltage spikes and surges, safeguarding connected components from damage and enhancing overall system stability.

Nominal Current Transfer Ratio: 200 %

The high nominal current transfer ratio of 200% indicates strong signal amplification and precise signal transmission between the input and output, making this optocoupler suitable for high-performance applications.

Maximum Isolation Voltage: 5300 V

The high maximum isolation voltage of 5300 V ensures effective isolation between input and output circuits, preventing cross-talk and interference, and enhancing safety and reliability in sensitive applications.

Technical Specifications

Optocoupler Transistor Outputs TIL919C attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Texas Instruments

Specs

Additional Features:

UL RECOGNIZED

Minimum Collector-emitter Breakdown Voltage:

35 V

Configuration:

SEPARATE, 4 CHANNELS

Nominal Current Transfer Ratio:

200 %

Maximum Dark Current:

100 nA

Maximum Forward Current:

.05 A

Maximum Isolation Voltage:

5300 V

No. of Elements:

4

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-55 Cel

Optoelectronic Type:

Trade Compliance

TIL919C Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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