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TIL917

Texas Instruments

TIL917 by Texas Instruments

TIL917 by Texas Instruments is a single optocoupler with Darlington output. It has a max forward current of 0.05A, isolation voltage of 5300V, and operates b/w -55°C to 100°C. Ideal for applications requiring high voltage isolation and signal transmission in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 7,863 parts In-Stock

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Digiode

USA . 3,470 parts In-Stock

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Electronic Expediters

USA . 663 parts In-Stock

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Parana Technologies

USA . 656 parts In-Stock

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$0.456

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$1.608

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DigiPath Technology Company

USA . 1,776 parts In-Stock

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$0.502

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$0.462

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ChromeModa Solutions

Germany . 5,117 parts In-Stock

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$0.512

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$0.420

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IDEA Electronic Components Group

UK . 983 parts In-Stock

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$0.512

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$0.461

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983

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AZTECH Wire

Italy . 488 parts In-Stock

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$5.101

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One Stop Electronics

USA . 1,225 parts In-Stock

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Corphita

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Assy Fe

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Overview

Unleash the power of high-quality optocoupler technology with the TIL917 by Texas Instruments. Designed to provide reliable and efficient performance, this single configuration device offers a maximum forward current of 0.05 A and a wide operating temperature range. Perfect for applications requiring precise control and isolation, such as industrial automation and telecommunications, the TIL917 boasts a Darlington output optocoupler that delivers exceptional performance. Trust in Texas Instruments' reputation for excellence and maximize the value and benefits of your projects with the TIL917.

Feature Benefit Bullets

Configuration: SINGLE

This single configuration allows for easy integration and simplifies the design of the overall system.

Maximum Forward Current: 0.05 A

With a maximum forward current of 0.05 A, this optocoupler transistor output can handle moderate current requirements effectively.

Optoelectronic Type: DARLINGTON OUTPUT OPTOCOUPLER

The Darlington output optocoupler provides high current transfer ratio and low saturation voltage, making it ideal for applications requiring high speed switching and accuracy.

Maximum Operating Temperature: 100 °C

The high maximum operating temperature ensures reliable performance even in harsh environmental conditions.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows for operation in a wide range of environments, making it versatile and suitable for various applications.

Maximum Dark Current: 100 nA

The low maximum dark current ensures minimal leakage current, enhancing the overall efficiency and reliability of the optocoupler transistor output.

Minimum Collector-emitter Breakdown Voltage: 35 V

The high minimum collector-emitter breakdown voltage provides protection against voltage spikes and ensures the longevity of the device.

Nominal Current Transfer Ratio: 20 %

The nominal current transfer ratio of 20% indicates good signal amplification and accurate signal transmission, making it suitable for precision applications.

Maximum Isolation Voltage: 5300 V

The high maximum isolation voltage ensures safe operation and protection against voltage transients, making it suitable for high voltage applications.

Technical Specifications

Optocoupler Transistor Outputs TIL917 attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Texas Instruments

Specs

Additional Features:

UL RECOGNIZED

Minimum Collector-emitter Breakdown Voltage:

35 V

Configuration:

SINGLE

Nominal Current Transfer Ratio:

20 %

Maximum Dark Current:

100 nA

Maximum Forward Current:

.05 A

Maximum Isolation Voltage:

5300 V

No. of Elements:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-55 Cel

Optoelectronic Type:

Trade Compliance

TIL917 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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