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THS7347IPHPG4

Texas Instruments

THS7347IPHPG4 by Texas Instruments

THS7347IPHPG4 by Texas Instruments is a 48-terminal buffer amplifier with a bandwidth of 550 MHz, ideal for industrial applications. It operates at temperatures ranging from -40 to 85 °C and has a max supply voltage of 5.5 V. With a low bias current of 3.5 uA, it offers high-speed performance in a compact package suitable for surface mount assembly.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,401 parts In-Stock

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8,401

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Digiode

USA . 936 parts In-Stock

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936

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Distributors (Availability)

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Parana Technologies

USA . 2,008 parts In-Stock

1+ parts

$4.978

100+ parts

-

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$5.524

10k+ parts

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2,008

$4.978

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$5.524

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One Stop Electronics

USA . 706 parts In-Stock

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$5.410

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-

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706

$5.410

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DigiPath Technology Company

USA . 608 parts In-Stock

1+ parts

$5.481

100+ parts

$5.043

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608

$5.481

$5.043

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ChromeModa Solutions

Germany . 4,003 parts In-Stock

1+ parts

$5.593

100+ parts

$4.586

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4,003

$5.593

$4.586

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IDEA Electronic Components Group

UK . 539 parts In-Stock

1+ parts

$5.593

100+ parts

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$5.034

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539

$5.593

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$5.034

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AZTECH Wire

Italy . 386 parts In-Stock

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$11.728

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386

$11.728

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Corphita

USA . 3,138 parts In-Stock

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Microchip USA

USA . 1,155 parts In-Stock

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GreenTree Electronics

Israel . 231 parts In-Stock

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Overview

Elevate your electronic designs with the THS7347IPHPG4 by Texas Instruments, a top-of-the-line buffer amplifier that delivers unmatched quality and reliability. Manufactured by one of the industry leaders, this innovative product is perfect for a wide range of applications. With its high performance and cutting-edge technology, the THS7347IPHPG4 offers exceptional value and benefits to customers looking for superior amplification solutions. Upgrade your projects today with this versatile amplifier and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good electrical isolation and protection for components, ensuring reliability and durability.

Maximum Average Bias Current (IIB): 3.5 uA

Low bias current helps in reducing power consumption and improving overall efficiency.

Surface Mount: YES

Ease of installation and space-saving benefits for compact electronic designs.

Nominal Supply Voltage / Vsup (V): 3.3

Compatible with common power supply voltages, making it easy to integrate into existing systems.

Nominal Bandwidth (3dB): 550 MHz

High bandwidth capability for efficient signal processing and transmission.

Maximum Operating Temperature: 85 °C

Suitable for use in industrial environments with varying temperature conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing overall performance.

Minimum Output Current: 0.045 A

Capable of delivering sufficient output current for driving various loads effectively.

Technical Specifications

Buffer Amplifiers THS7347IPHPG4 attributes and parameters. Explore more Buffer Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Total Functions:

1

Sub-Category:

Buffer Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

550 MHz

Nominal Slew Rate:

1050 V/us

Peak Bias Current:

3.5 uA

Operational Characteristics

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage:

5.5 V

Lowest Output Current:

45 mA

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Reflow Peak Time Limit:

30 s

Peak Reflow Temperature:

260 °C (500 °F)

Physical Characteristics

Length:

0.276 in (7 mm)

Width:

0.276 in (7 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

48

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Quad

Terminal Style:

Terminal Finish:

Nickel PalladiumGold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

3

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PQFP-G48

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tray

Package Code:

Package Shape:

Package Style:

Flatpack, Heat Sink/Slug, Thin Profile, Fine Pitch

Trade Compliance

THS7347IPHPG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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