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THS4120IDGNR

Texas Instruments

THS4120IDGNR by Texas Instruments

THS4120IDGNR by Texas Instruments is an Operational Amplifier with 100 MHz bandwidth, 96 dB CMRR, and 3.3V supply voltage. Ideal for industrial applications requiring high-speed signal processing in a compact form factor due to its small outline package and low bias current of 0.0000012 uA.

Median Price

$2.490

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 250 parts In-Stock

1+ parts

$2.490

100+ parts

$2.440

1k+ parts

$2.390

10k+ parts

-

250

$2.490

$2.440

$2.390

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,186 parts In-Stock

1+ parts

$3.420

100+ parts

-

1k+ parts

-

10k+ parts

-

1,186

$3.420

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-

-

Vyrian

USA . 9,421 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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9,421

-

-

-

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Rebound Electronics

UK . 1,145 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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1,145

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,384 parts In-Stock

1+ parts

$2.801

100+ parts

-

1k+ parts

$3.287

10k+ parts

-

1,384

$2.801

-

$3.287

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DigiPath Technology Company

USA . 1,989 parts In-Stock

1+ parts

$3.084

100+ parts

$2.837

1k+ parts

-

10k+ parts

-

1,989

$3.084

$2.837

-

-

ChromeModa Solutions

Germany . 2,404 parts In-Stock

1+ parts

$3.147

100+ parts

$2.581

1k+ parts

-

10k+ parts

-

2,404

$3.147

$2.581

-

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IDEA Electronic Components Group

UK . 1,839 parts In-Stock

1+ parts

$3.147

100+ parts

-

1k+ parts

$2.832

10k+ parts

-

1,839

$3.147

-

$2.832

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Corphita

USA . 4,031 parts In-Stock

1+ parts

$3.240

100+ parts

-

1k+ parts

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4,031

$3.240

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AZTECH Wire

Italy . 585 parts In-Stock

1+ parts

$14.280

100+ parts

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585

$14.280

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A-Z Elektronik GmbH

Germany . 5,153 parts In-Stock

1+ parts

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5,153

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Kepictronics

USA . 5,000 parts In-Stock

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5,000

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Assy Fe

Spain . 1,499 parts In-Stock

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1,499

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Overview

Discover the unparalleled performance of the THS4120IDGNR by Texas Instruments, a top-tier operational amplifier that delivers exceptional quality and reliability. With cutting-edge technology and precision engineering, Texas Instruments ensures that this op amp meets the highest standards in the industry. Ideal for a wide range of applications, this product offers customers unmatched value, benefits, and advantages. Experience enhanced functionality and efficiency with the THS4120IDGNR, setting new standards in operational amplifiers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides good durability and protection for the operational amplifier, ensuring longevity in various operating conditions.

Maximum Input Offset Voltage: 8000 uV

The low maximum input offset voltage of 8000 uV ensures minimal error in the output signal, making this operational amplifier suitable for precision applications.

Surface Mount: YES

Being surface mountable, this operational amplifier is easy to integrate into circuit boards, saving space and simplifying the assembly process.

Nominal Common Mode Reject Ratio: 96 dB

With a high nominal common mode reject ratio of 96 dB, this operational amplifier effectively rejects common mode noise, ensuring a clean and reliable output signal.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V offers compatibility with a wide range of electronic systems, making this operational amplifier versatile and easy to use.

Nominal Unity Gain Bandwidth: 100000 kHz

The high nominal unity gain bandwidth of 100000 kHz allows for high-speed signal processing, making this operational amplifier suitable for applications requiring fast response times.

Technology: CMOS

Utilizing CMOS technology, this operational amplifier offers low power consumption and high noise immunity, making it suitable for battery-powered and noise-sensitive applications.

Technical Specifications

Operational Amplifiers (Op Amps) THS4120IDGNR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

3.3 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Bandwidth (3dB):

100 MHz

Nominal Unity Gain Bandwidth:

100 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

96 dB

Minimum Common Mode Rejection Ratio (CMRR ):

64 dB

Input Offset Voltage Limit:

8000 uV

Minimum Voltage Gain:

1000

Nominal Slew Rate:

55 V/us

Peak Bias Current:

1.2 pA

Maximum Bias Current (IIB) @25 °C:

1.2 pA

Operational Characteristics

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage:

3.6 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

13.5 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.042 in (1.07 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

THS4120IDGNR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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