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TGL6425-SCC

Texas Instruments

TGL6425-SCC by Texas Instruments

TGL6425-SCC by Texas Instruments is a GAAS technology RF attenuator with 19.7 dB attenuation, 30 dBm CW input power, and 1.4 max VSWR. Ideal for applications requiring variable attenuation in the frequency range of 500 MHz to 18 GHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,731 parts In-Stock

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4,731

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Digiode

USA . 2,433 parts In-Stock

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Parana Technologies

USA . 1,775 parts In-Stock

1+ parts

$2.547

100+ parts

$236.544

1k+ parts

$2.292

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1,775

$2.547

$236.544

$2.292

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DigiPath Technology Company

USA . 1,736 parts In-Stock

1+ parts

$2.805

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1,736

$2.805

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IDEA Electronic Components Group

UK . 1,403 parts In-Stock

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$2.862

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$2.576

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1,403

$2.862

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$2.576

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ChromeModa Solutions

Germany . 26 parts In-Stock

1+ parts

$2.862

100+ parts

$2.347

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26

$2.862

$2.347

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One Stop Electronics

USA . 1,539 parts In-Stock

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$4.000

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1,539

$4.000

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AZTECH Wire

Italy . 713 parts In-Stock

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$6.182

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713

$6.182

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Ampacity Inc.

Singapore . 902 parts In-Stock

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$17.000

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902

$17.000

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Semicontronic

India . 1,057 parts In-Stock

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$21.000

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$20.475

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$20.370

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$21.000

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$20.370

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Corphita

USA . 705 parts In-Stock

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705

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Perfect Parts

USA . 560 parts In-Stock

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Corohmni

South Africa . 273 parts In-Stock

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Overview

Experience unparalleled quality and reliability with the TGL6425-SCC by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-of-the-line RF/Microwave Attenuators that are perfect for a wide range of applications. With a maximum input power of 30 dBm and a nominal attenuation of 19.7 dB, this variable attenuator offers exceptional performance and precision. Whether you're working in telecommunications, aerospace, or research, this product provides unmatched value, benefits, and advantages to meet your needs. Trust in Texas Instruments for superior technology that delivers results.

Feature Benefit Bullets

Maximum Input Power (CW): 30 dBm

This high maximum input power allows for reliable operation even when exposed to higher power levels.

Maximum Voltage Standing Wave Ratio: 1.4

The low VSWR indicates minimal loss in signal transmission, ensuring efficient performance.

Nominal Attenuation: 19.7 dB

The significant attenuation value allows for precise control over signal strength, enabling customization for various applications.

Construction: COMPONENT

The use of high-quality components ensures durability and long-lasting performance of the attenuator.

Power Supplies (V): -5

The low power supply voltage requirement helps in minimizing power consumption and making the product energy-efficient.

Technology: GAAS

The Gallium Arsenide technology offers high performance and reliability in RF/microwave applications.

RF or Microwave Device Type: VARIABLE ATTENUATOR

Being a variable attenuator, this product allows for adjustable attenuation levels, offering flexibility in signal control.

Minimum Operating Frequency: 500 MHz

The wide range of operating frequencies makes this attenuator suitable for various RF/microwave systems.

Maximum Operating Frequency: 18000 MHz

With a high maximum operating frequency, this attenuator can handle a wide range of RF/microwave signals, making it versatile for different applications.

Technical Specifications

RF/Microwave Attenuators TGL6425-SCC attributes and parameters. Explore more RF/Microwave Attenuators devices from Texas Instruments

Specs

Nominal Attenuation:

19.7 dB

Construction:

COMPONENT

Maximum Input Power (CW):

30 dBm

Maximum Operating Frequency:

18000 MHz

Minimum Operating Frequency:

500 MHz

Package Equivalence Code:

DIE OR CHIP

Power Supplies (V):

-5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Attenuators

Technology:

Maximum Voltage Standing Wave Ratio:

1.4

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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