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TAS5424ATDKDRMQ1

Texas Instruments

TAS5424ATDKDRMQ1 by Texas Instruments

TAS5424ATDKDRMQ1 by Texas Instruments is an audio amplifier IC with 4 channels, 116W output power, and 32dB gain. It operates in industrial temperature range (-40 to 105°C) and supports supply voltage from 8V to 22V. Suitable for automotive applications due to AEC-Q100 screening level and compact package design.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,511 parts In-Stock

1+ parts

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3,511

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Digiode

USA . 1,707 parts In-Stock

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1,707

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Chip Stock

USA . 1,125 parts In-Stock

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1,125

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,326 parts In-Stock

1+ parts

$1.899

100+ parts

-

1k+ parts

$2.438

10k+ parts

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1,326

$1.899

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$2.438

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DigiPath Technology Company

USA . 192 parts In-Stock

1+ parts

$2.091

100+ parts

$1.924

1k+ parts

-

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192

$2.091

$1.924

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ChromeModa Solutions

Germany . 2,330 parts In-Stock

1+ parts

$2.134

100+ parts

$1.750

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2,330

$2.134

$1.750

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IDEA Electronic Components Group

UK . 1,897 parts In-Stock

1+ parts

$2.134

100+ parts

-

1k+ parts

$1.921

10k+ parts

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1,897

$2.134

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$1.921

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AZTECH Wire

Italy . 201 parts In-Stock

1+ parts

$11.353

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201

$11.353

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One Stop Electronics

USA . 472 parts In-Stock

1+ parts

$18.800

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472

$18.800

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Corphita

USA . 4,297 parts In-Stock

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4,297

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Microchip USA

USA . 148 parts In-Stock

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148

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Overview

Experience premium audio quality with the TAS5424ATDKDRMQ1 by Texas Instruments, a leading manufacturer in the industry. This audio amplifier is perfect for a wide range of applications in the audio and video sector. Offering a powerful output of 116W and a compact design, this product provides exceptional value to customers looking for high-quality sound amplification. Trust Texas Instruments for superior performance and reliability in all your audio needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, perfect for portable applications.

Surface Mount: YES

Being surface mountable makes installation easy and compact, saving space in electronic devices.

General IC Type: AUDIO AMPLIFIER

Specifically designed for audio amplification, ensuring high-quality sound output.

Nominal Output Power: 116 W

With a high nominal output power of 116 W, this amplifier can drive loud speakers with ease.

Maximum Operating Temperature: 105 °C

The high maximum operating temperature allows for reliable performance even in demanding environmental conditions.

Minimum Operating Temperature: -40 °C

Operational in low temperatures, making it suitable for a wide range of applications.

No. of Channels: 4

This amplifier supports multiple channels, allowing for more complex audio setups and configurations.

Technical Specifications

Audio & Video Amplifiers TAS5424ATDKDRMQ1 attributes and parameters. Explore more Audio & Video Amplifiers devices from Texas Instruments

Specs

General IC Type:

Gain:

32 dB

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e4

Length:

15.9 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

4

No. of Functions:

1

No. of Terminals:

44

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Power:

116 W

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP44,.55

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, SHRINK PITCH

Peak Reflow Temperature (C):

245

Power Supplies (V):

14.4

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

3.6 mm

Sub-Category:

Audio/Video Amplifiers

Maximum Supply Voltage (Vsup):

22 V

Minimum Supply Voltage (Vsup):

8 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

11 mm

Trade Compliance

TAS5424ATDKDRMQ1 General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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