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TAS5112DFDRG4

Texas Instruments

TAS5112DFDRG4 by Texas Instruments

TAS5112DFDRG4 by Texas Instruments is an audio amplifier IC with 2 channels, 62W output power, and 10% harmonic distortion. It operates b/w 0-70°C, with supply voltage ranging from 3-29.5V. Ideal for applications requiring high-quality audio amplification in a compact package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,831 parts In-Stock

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6,831

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Digiode

USA . 1,574 parts In-Stock

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1,574

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Distributors (Availability)

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Parana Technologies

USA . 590 parts In-Stock

1+ parts

$1.533

100+ parts

-

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$2.188

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590

$1.533

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$2.188

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DigiPath Technology Company

USA . 1,292 parts In-Stock

1+ parts

$1.688

100+ parts

$1.553

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1,292

$1.688

$1.553

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IDEA Electronic Components Group

UK . 1,696 parts In-Stock

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$1.722

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$1.550

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1,696

$1.722

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$1.550

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ChromeModa Solutions

Germany . 785 parts In-Stock

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$1.722

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$1.412

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785

$1.722

$1.412

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AZTECH Wire

Italy . 463 parts In-Stock

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$10.087

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463

$10.087

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One Stop Electronics

USA . 402 parts In-Stock

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$10.800

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402

$10.800

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Component Stockers USA

USA . 432 parts In-Stock

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$99.990

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432

$99.990

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Microchip USA

USA . 12,379 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,524 parts In-Stock

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7,524

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Kepictronics

USA . 7,200 parts In-Stock

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RC Electronics

USA . 6,210 parts In-Stock

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GreenTree Electronics

Israel . 4,500 parts In-Stock

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Corphita

USA . 3,917 parts In-Stock

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3,917

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Overview

Unleash the power of Texas Instruments with the TAS5112DFDRG4 Audio Amplifier! Experience unparalleled quality and performance in the field of Audio & Video Amplifiers. This small, sleek package offers a wide range of applications and high nominal output power of 62W, perfect for any audio project. With Texas Instruments' reputation for excellence and innovation, you can trust that this amplifier will deliver top-notch sound quality and reliability. Upgrade your audio experience today with the TAS5112DFDRG4!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and stability, making the product long-lasting.

Surface Mount: YES

Surface mount capability allows for easy installation and integration into various electronic devices.

Harmonic Distortion: 10 %

Low harmonic distortion ensures high-quality audio output with minimal interference or distortion.

Nominal Output Power: 62 W

High nominal output power allows for loud and clear audio performance, suitable for a variety of applications.

No. of Channels: 2

Dual channels provide stereo sound output, enhancing the audio experience for the user.

Nominal Bandwidth: 0.02 kHz

Wide nominal bandwidth ensures that the audio amplifier can handle a range of frequencies, producing clear and crisp sound.

Technical Specifications

Audio & Video Amplifiers TAS5112DFDRG4 attributes and parameters. Explore more Audio & Video Amplifiers devices from Texas Instruments

Specs

Nominal Bandwidth:

.02 kHz

General IC Type:

Harmonic Distortion:

10 %

JESD-30 Code:

R-PDSO-G56

Length:

14 mm

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

56

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Nominal Output Power:

62 W

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.3,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3,29.5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Audio/Video Amplifiers

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.1 mm

Trade Compliance

TAS5112DFDRG4 General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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