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SNJ54HC27J

Texas Instruments

SNJ54HC27J by Texas Instruments

SNJ54HC27J by Texas Instruments is a CMOS logic gate with 3 functions, 3 inputs, and 27 ns propagation delay at 5V. It is MILITARY grade with TIN LEAD finish, suitable for applications requiring high reliability in harsh environments. Package style is IN-LINE, with dimensions of 19.56mm x 6.67mm x 5.08mm and operates b/w -55 to +125 °C temperature range.

Median Price

$9.070

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 382 parts In-Stock

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$8.020

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$7.860

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$7.700

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$8.020

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DigiKey

USA . 344 parts In-Stock

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$10.120

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Freelance Electronics

USA . 27 parts In-Stock

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$5.337

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$6.404

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$5.284

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$5.337

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Digiode

USA . 2,359 parts In-Stock

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$9.709

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Vyrian

USA . 6,850 parts In-Stock

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Mentor Electronics Marketing, LLC

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Bristol Electronics

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Dan-Mar Components

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Mil-Aero Solutions, Inc.

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Electronic Expediters

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Microfarads

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Beltway Electronics Company

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Resion

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ComSIT Distribution GmbH

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Holdelec - ElecDif-Pro

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PAR Electronics

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LWI Electronics Inc

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Corphita

USA . 1,560 parts In-Stock

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$9.198

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Component Stockers USA

USA . 311 parts In-Stock

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$9.910

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$9.320

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Parana Technologies

USA . 2,307 parts In-Stock

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$15.771

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$16.131

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DigiPath Technology Company

USA . 334 parts In-Stock

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$17.366

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ChromeModa Solutions

Germany . 5,506 parts In-Stock

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$17.720

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$14.530

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IDEA Electronic Components Group

UK . 744 parts In-Stock

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$17.720

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$16.834

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$15.948

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Microchip USA

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Perfect Parts

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Assy Fe

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Cyclops Electronics Ltd (Excess)

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Overview

Enhance your electronics projects with the Texas Instruments SNJ54HC27J Logic Gates. Crafted with precision using quality materials, this product offers reliable performance and durability. Ideal for military-grade applications, this logic gate provides fast propagation delay and multiple functions in a compact, rectangular package. With Texas Instruments' reputation for excellence in semiconductor manufacturing, you can trust that this product delivers exceptional value and performance. Upgrade your designs with the SNJ54HC27J and experience the benefits of superior quality and efficiency.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides excellent durability and protection for the internal components, ensuring a long lifespan for the product.

Propagation Delay At Nominal Supply: 27 ns

Fast propagation delay ensures efficient performance and quick response times in logic operations.

No. of Functions: 3

Having multiple functions in a single device allows for versatile use and saves space in circuit designs.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard 5V supply voltage, making it compatible with a wide range of systems and applications.

Maximum Operating Temperature: 125 °C

Capable of operating at high temperatures, suitable for harsh environments and industrial applications.

Technology: CMOS

Utilizes CMOS technology which is known for low power consumption and high noise immunity, making it energy-efficient and reliable.

Technical Specifications

Logic Gates SNJ54HC27J attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

HC

JESD-30 Code:

R-GDIP-T14

JESD-609 Code:

e0

Length:

19.56 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

No. of Functions:

3

No. of Inputs:

3

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

27 ns

Propagation Delay (tpd):

135 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.08 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

6.67 mm

Trade Compliance

SNJ54HC27J Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-264-3468, 5962012643468, 5962-01-248-7305, 5962012487305, 5962-01-200-8154, 5962012008154

NIIN

012643468, 012487305, 012008154

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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