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SNJ54HC08J

Texas Instruments

SNJ54HC08J by Texas Instruments

SNJ54HC08J by Texas Instruments is a CMOS logic gate with 4 functions, 2 inputs, and 30 ns propagation delay. It operates b/w -55 to 125 °C and has a max supply voltage of 6 V. Ideal for military applications due to MIL-PRF-38535 screening level and TIN LEAD terminal finish.

Median Price

$17.925

Lifecycle Status

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38

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1k+

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Rochester

USA . 212 parts In-Stock

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$14.340

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$12.830

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$12.070

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DigiKey

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$18.860

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Verical

USA . 212 parts In-Stock

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$17.925

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$16.038

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$15.088

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Component Electronics Inc.

Canada . 2 parts In-Stock

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Freelance Electronics

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NAC Semi

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Digiode

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Bristol Electronics

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Vyrian

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Manoshevitz Elec. Sales

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ECAB

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Speed Components Ltd

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Electronics Depot

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Mil-Aero Solutions, Inc.

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LWI Electronics Inc

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Component Sense

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Prism Electronics

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Sogenti Electronics

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PC Components Company LLC

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Beltway Electronics Company

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Holdelec - ElecDif-Pro

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Resion

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Mentor Electronics Marketing, LLC

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MISTER SPROCKETS

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ComSIT Distribution GmbH

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Microfarads

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Corel Iberica Componentes, S.L.

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Inland Empire Components Inc.

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Elcom Components

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Legend Electronics Inc.

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Component Stockers USA

USA . 1,097 parts In-Stock

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$8.440

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$9.520

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Parana Technologies

USA . 1,094 parts In-Stock

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$9.862

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DigiPath Technology Company

USA . 1,836 parts In-Stock

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ChromeModa Solutions

Germany . 6,203 parts In-Stock

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$8.495

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IDEA Electronic Components Group

UK . 1,349 parts In-Stock

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Corphita

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Microchip USA

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Overview

Elevate your electronics projects with the SNJ54HC08J by Texas Instruments, a top-of-the-line logic gate that offers unparalleled quality and reliability. Manufactured with precision and expertise, this component is designed to deliver optimal performance in a wide range of applications. With its fast propagation delay and durable construction, the SNJ54HC08J ensures efficient operation and long-lasting functionality. Trust in Texas Instruments to provide you with the tools you need to succeed in your electronic endeavors.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Ensures durability and protects internal components from environmental factors, ensuring a long lifespan for the product.

Propagation Delay At Nominal Supply: 30 ns

Fast propagation delay allows for quick signal processing, making this product suitable for high-speed applications.

No. of Functions: 4

Having multiple functions in a single device saves space and reduces the need for additional components, making it cost-effective.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard 5V supply voltage, making it compatible with many existing systems and easy to integrate.

Minimum Operating Temperature: -55 °C

Capable of operating at extremely low temperatures, suitable for use in harsh environments or applications where temperatures can vary widely.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable in noisy environments.

Technical Specifications

Logic Gates SNJ54HC08J attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

HC

JESD-30 Code:

R-GDIP-T14

JESD-609 Code:

e0

Length:

19.56 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

5.2 Amp

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

30 ns

Propagation Delay (tpd):

150 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.08 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

6.67 mm

Trade Compliance

SNJ54HC08J Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-225-1558, 5962012251558, 5962-01-291-4150, 5962012914150, 5962-14-464-1909, 5962144641909

NIIN

012251558, 012914150, 144641909

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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