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SN74F1018

Texas Instruments

SN74F1018 by Texas Instruments

The Texas Instruments SN74F1018 is a diode with a fast reverse recovery time of 0.01 us and low reverse current of 2 uA. It operates b/w temperatures of 0 to 70 °C and has a max forward voltage of 1.2 V. Ideal for applications requiring quick switching and low power consumption in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,008 parts In-Stock

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Digiode

USA . 4,932 parts In-Stock

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Semicontronic

India . 1,392 parts In-Stock

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$0.010

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$0.010

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$0.010

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1,392

$0.010

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Parana Technologies

USA . 1,080 parts In-Stock

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$0.047

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$1.427

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$0.047

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DigiPath Technology Company

USA . 2,230 parts In-Stock

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$0.052

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$0.048

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$0.052

$0.048

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ChromeModa Solutions

Germany . 1,307 parts In-Stock

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$0.053

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$0.043

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1,307

$0.053

$0.043

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IDEA Electronic Components Group

UK . 508 parts In-Stock

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$0.053

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$0.048

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508

$0.053

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$0.048

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Ampacity Inc.

Singapore . 1,040 parts In-Stock

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$1.010

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$1.010

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One Stop Electronics

USA . 488 parts In-Stock

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$2.010

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AZTECH Wire

Italy . 468 parts In-Stock

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$7.312

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Corphita

USA . 275 parts In-Stock

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Corohmni

South Africa . 89 parts In-Stock

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Overview

Experience the unmatched quality and reliability of Texas Instruments with the SN74F1018 Other Function Diode. With a fast reverse recovery time of 0.01 us and low reverse current of 2 uA, this diode is perfect for a wide range of applications. From power supplies to signal processing, this diode offers exceptional performance and efficiency. Trust Texas Instruments for superior products that deliver value and uncompromising quality. Elevate your projects with the SN74F1018 and experience the difference today.

Feature Benefit Bullets

Maximum Reverse Recovery Time: 0.01 us

The low reverse recovery time ensures fast switching, making this diode suitable for high-frequency applications.

Maximum Reverse Current: 2 uA

The low reverse current indicates minimal leakage current, making this diode efficient and reliable in preventing current flow in the reverse direction.

Reverse Test Voltage: 7 V

The high reverse test voltage allows for reliable operation in applications where the diode may be subjected to reverse voltage conditions.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this diode can withstand elevated temperature environments without compromising performance.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature ensures the diode can function effectively in a wide range of temperature conditions, making it versatile for various applications.

Maximum Forward Voltage (VF): 1.2 V

The low forward voltage drop enhances the efficiency of the diode, reducing power loss and improving overall performance in forward conduction.

Maximum Repetitive Peak Reverse Voltage: 7 V

The high repetitive peak reverse voltage capability makes this diode suitable for applications requiring protection against reverse voltage spikes or surges.

Technical Specifications

Other Function Diodes SN74F1018 attributes and parameters. Explore more Other Function Diodes devices from Texas Instruments

Specs

Maximum Forward Voltage (VF):

1.2 V

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Maximum Repetitive Peak Reverse Voltage:

7 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.01 us

Reverse Test Voltage:

7 V

Sub-Category:

Other Diodes

Surface Mount:

NO

Trade Compliance

SN74F1018 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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