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SN74CB3Q3251DBQRG4

Texas Instruments

SN74CB3Q3251DBQRG4 by Texas Instruments

SN74CB3Q3251DBQRG4 by Texas Instruments is a 16-terminal multiplexer with a propagation delay of 0.18 ns, operating at temperatures b/w -40 to 85 °C. It has a supply voltage range of 2.3-3.6 V and is ideal for industrial applications requiring fast signal switching in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,885 parts In-Stock

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Vyrian

USA . 3,769 parts In-Stock

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Nova Conductors

Japan . 600 parts In-Stock

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Corohmni

South Africa . 311 parts In-Stock

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$12.363

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311

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AZTECH Wire

Italy . 784 parts In-Stock

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$18.955

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Parana Technologies

USA . 958 parts In-Stock

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$29.161

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$56.179

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One Stop Electronics

USA . 699 parts In-Stock

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$31.000

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$31.000

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DigiPath Technology Company

USA . 1,312 parts In-Stock

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$32.110

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ChromeModa Solutions

Germany . 5,403 parts In-Stock

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$32.765

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$26.867

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IDEA Electronic Components Group

UK . 2,335 parts In-Stock

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$32.765

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$31.127

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$29.488

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Ampacity Inc.

Singapore . 1,203 parts In-Stock

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$43.000

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Semicontronic

India . 640 parts In-Stock

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$44.000

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$42.900

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$42.680

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Continental Prestige Electronics

USA . 4,239 parts In-Stock

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Argo Parts USA

USA . 2,963 parts In-Stock

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Corphita

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Bastille Electronics

Australia . 200 parts In-Stock

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Overview

Experience the superior quality and reliability of Texas Instruments with the SN74CB3Q3251DBQRG4 multiplexer & demultiplexer. This versatile component is perfect for a wide range of applications, offering seamless integration and exceptional performance. With a nominal supply voltage of 2.5V and 3.3V power supplies, this product delivers efficient switching capabilities with a fast propagation delay of 0.18 ns. Trust Texas Instruments to provide cutting-edge technology in a compact package, ensuring optimal functionality and value for all your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the multiplexer/demultiplexer.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

Nominal Supply Voltage / Vsup (V): 2.5

Compatible with a wide range of systems and applications, offering flexibility in power supply requirements.

Propagation Delay (tpd): 0.18 ns

Ensures fast and efficient signal processing, making the multiplexer/demultiplexer suitable for high-speed applications.

Output Characteristics: 3-STATE

Allows for the tri-state logic output, providing an additional state beyond the standard HIGH and LOW states for added versatility in signal control.

Technical Specifications

Multiplexer & Demultiplexer SN74CB3Q3251DBQRG4 attributes and parameters. Explore more Multiplexer & Demultiplexer devices from Texas Instruments

Specs

Family:

CB3Q/3VH/3C/2B

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Inputs:

1

No. of Outputs:

8

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Propagation Delay (tpd):

.18 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Other Logic ICs

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

SN74CB3Q3251DBQRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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