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SN24710DGSR

Texas Instruments

SN24710DGSR by Texas Instruments

SN24710DGSR by Texas Instruments is a Power Management IC with 10 terminals, operating voltage range of 2.5V to 18V, and max output current of 500A. It is designed for industrial applications requiring a compact package style (3x3mm) with surface mount capability and adjustable threshold feature.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,678 parts In-Stock

1+ parts

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2,678

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Digiode

USA . 2,666 parts In-Stock

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2,666

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 210 parts In-Stock

1+ parts

$1.500

100+ parts

-

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210

$1.500

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One Stop Electronics

USA . 289 parts In-Stock

1+ parts

$2.500

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289

$2.500

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Semicontronic

India . 664 parts In-Stock

1+ parts

$3.500

100+ parts

$3.412

1k+ parts

$3.395

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664

$3.500

$3.412

$3.395

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Microchip USA

USA . 3,863 parts In-Stock

1+ parts

$9.643

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3,863

$9.643

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$13.526

100+ parts

$13.391

1k+ parts

$12.850

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50

$13.526

$13.391

$12.850

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Parana Technologies

USA . 1,869 parts In-Stock

1+ parts

$14.273

100+ parts

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$14.726

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1,869

$14.273

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$14.726

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AZTECH Wire

Italy . 837 parts In-Stock

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$14.374

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837

$14.374

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DigiPath Technology Company

USA . 2,016 parts In-Stock

1+ parts

$15.716

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$14.459

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2,016

$15.716

$14.459

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ChromeModa Solutions

Germany . 3,863 parts In-Stock

1+ parts

$16.037

100+ parts

$13.150

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3,863

$16.037

$13.150

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IDEA Electronic Components Group

UK . 829 parts In-Stock

1+ parts

$16.037

100+ parts

$15.235

1k+ parts

$14.433

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829

$16.037

$15.235

$14.433

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Corphita

USA . 3,615 parts In-Stock

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3,615

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Corohmni

South Africa . 340 parts In-Stock

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340

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Overview

Elevate your power management game with the SN24710DGSR by Texas Instruments. This innovative Power Management IC boasts top-notch quality and reliability, thanks to its renowned manufacturer. Ideal for a variety of applications, this compact yet powerful device offers unmatched value, efficiency, and performance. Say goodbye to power supply woes and hello to seamless operations with the SN24710DGSR - the ultimate solution for all your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the integrated circuits within the package.

Surface Mount: YES

Allows for easy installation and space-saving on circuit boards.

Nominal Supply Voltage (Vsup): 12 V

Provides a stable power source for the device.

Maximum Operating Temperature: 85 °C

Ensures reliability and performance even in high-temperature environments.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides excellent conductivity and corrosion resistance for long-term use.

Maximum Output Current: 500 A

Allows for high power output capabilities.

Adjustable Threshold: YES

Allows for flexibility in adjusting the device's operating parameters.

Technical Specifications

Power Management ICs SN24710DGSR attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

YES

JESD-30 Code:

S-PDSO-G10

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

500 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.1 mm

Maximum Supply Current (Isup):

1.4 mA

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage (Vsup):

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3 mm

Trade Compliance

SN24710DGSR Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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