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PDRV5053OAQDBZT

Texas Instruments

PDRV5053OAQDBZT by Texas Instruments

PDRV5053OAQDBZT by Texas Instruments is a magnetic field sensor with 2.5-38V supply voltage range, -40 to 125°C operating temperature, and 0-2V analog output. Ideal for applications requiring precise Hall effect sensing in compact spaces due to its small rectangular package design.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,269 parts In-Stock

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Digiode

USA . 1,313 parts In-Stock

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Parana Technologies

USA . 1,190 parts In-Stock

1+ parts

$3.087

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$3.604

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1,190

$3.087

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$3.604

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DigiPath Technology Company

USA . 400 parts In-Stock

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$3.400

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$3.128

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$3.400

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ChromeModa Solutions

Germany . 6,779 parts In-Stock

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$3.469

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$2.845

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$3.469

$2.845

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IDEA Electronic Components Group

UK . 1,596 parts In-Stock

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$3.469

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$3.122

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One Stop Electronics

USA . 661 parts In-Stock

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$3.750

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661

$3.750

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Ampacity Inc.

Singapore . 276 parts In-Stock

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$8.750

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Semicontronic

India . 787 parts In-Stock

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$12.750

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$12.431

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$12.368

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787

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AZTECH Wire

Italy . 234 parts In-Stock

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$17.378

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Corphita

USA . 724 parts In-Stock

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Corohmni

South Africa . 375 parts In-Stock

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Overview

Discover the next level of precision and reliability with the PDRV5053OAQDBZT magnetic field sensor by Texas Instruments. Designed with top-tier quality and cutting-edge technology, this sensor offers unparalleled performance in a wide range of applications. From automotive to industrial automation, this sensor provides accurate and consistent measurements, ensuring optimal efficiency and productivity. Experience the value and benefits of Texas Instruments' superior engineering with the PDRV5053OAQDBZT, setting new standards in magnetic field sensing technology.

Feature Benefit Bullets

Maximum Supply Voltage: 38 V

Allows for a wide range of input voltages, making this sensor suitable for a variety of applications.

Body Width: 1.3 inch

Compact size allows for easy integration into different devices or systems.

Sensors or Transducers Type: MAGNETIC FIELD SENSOR, HALL EFFECT

Utilizes Hall Effect technology for accurate and reliable measurement of magnetic fields.

Body Height: 1.005 mm

Low profile design enables the sensor to be installed in tight spaces.

Package Shape or Style: RECTANGULAR

Easily fits into standard mounting configurations for convenience.

Minimum Supply Voltage: 2.5 V

Low minimum supply voltage allows for efficient power usage.

Maximum Operating Temperature: 125 °C

High operating temperature range ensures reliability in various environmental conditions.

Output Range: 0-2V

Output voltage range provides a clear indication of magnetic field strength.

Output Type: ANALOG VOLTAGE

Analog output allows for precise measurement of magnetic fields.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for use in both hot and cold environments.

Maximum Operating Current: 3.6 mA

Low operating current helps minimize power consumption.

Housing: PLASTIC

Plastic housing provides durability while keeping the overall weight of the sensor low.

Body Length/Diameter: 2.92 mm

Compact size makes it easy to incorporate into various designs.

Termination Type: SOLDER

Solder termination ensures a secure and reliable connection.

Mounting Feature: SURFACE MOUNT

Surface mount capability allows for easy installation on circuit boards.

Technical Specifications

Magnetic Field Sensors PDRV5053OAQDBZT attributes and parameters. Explore more Magnetic Field Sensors devices from Texas Instruments

Specs

Additional Features:

SHORT CIRCUIT PROTECTION

Body Width:

1.3 inch

Body Height:

1.005 mm

Body Length/Diameter:

2.92 mm

Housing:

PLASTIC

Linearity (%):

1

Mounting Feature:

Maximum Operating Current:

3.6 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Range:

Output Type:

Package Shape or Style:

Sensors or Transducers Type:

Maximum Supply Voltage:

38 V

Minimum Supply Voltage:

2.5 V

Termination Type:

SOLDER

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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